Exciton capture and thermal escape in InAs dot-in-a-well laser structures

T. V. Torchynska

doi:10.1016/j.spmi.2008.09.010

Exciton capture and thermal escape in InAs dot-in-a-well laser structures

T. V. Torchynska

Escuela Superior de Física y Matemáticas (ESFM)

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The photoluminescence (PL), its temperature and power dependences have been studied in InAs quantum dots (QDs) embedded in asymmetric In_xGa_1-y As/GaAs quantum wells (QWs) with variable In_xGa_1-x As compositions in the capping layer. Three stages for thermally activated decay of QD PL intensity have been revealed. A set of rate equations for exciton dynamics (relaxation into QWs and QDs, and thermal escape) are solved to analyze the mechanism of PL thermal decay. The variety of PL intensities and peak positions, as well as the activation energies of PL intensity decay in DWELL structures with different compositions of a capping layer are discussed.

Original language	English
Pages (from-to)	349-355
Number of pages	7
Journal	Superlattices and Microstructures
Volume	45
Issue number	4-5
DOIs	https://doi.org/10.1016/j.spmi.2008.09.010
State	Published - Apr 2009

Keywords

Exciton thermal escape
Photoluminescence
Quantum dots

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10.1016/j.spmi.2008.09.010

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title = "Exciton capture and thermal escape in InAs dot-in-a-well laser structures",

abstract = "The photoluminescence (PL), its temperature and power dependences have been studied in InAs quantum dots (QDs) embedded in asymmetric InxGa1-y As/GaAs quantum wells (QWs) with variable InxGa1-x As compositions in the capping layer. Three stages for thermally activated decay of QD PL intensity have been revealed. A set of rate equations for exciton dynamics (relaxation into QWs and QDs, and thermal escape) are solved to analyze the mechanism of PL thermal decay. The variety of PL intensities and peak positions, as well as the activation energies of PL intensity decay in DWELL structures with different compositions of a capping layer are discussed.",

keywords = "Exciton thermal escape, Photoluminescence, Quantum dots",

author = "Torchynska, {T. V.}",

note = "Funding Information: The author thanks Dr. Andreas Stintz from the Center of High Technology Materials at University of New Mexico, Albuquerque, NM, USA for growing studied DWELL structures. The work was partially supported by CONACYT, Mexico (project N 58358) and by SIP-IPN, Mexico. ",

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T1 - Exciton capture and thermal escape in InAs dot-in-a-well laser structures

AU - Torchynska, T. V.

N1 - Funding Information: The author thanks Dr. Andreas Stintz from the Center of High Technology Materials at University of New Mexico, Albuquerque, NM, USA for growing studied DWELL structures. The work was partially supported by CONACYT, Mexico (project N 58358) and by SIP-IPN, Mexico.

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N2 - The photoluminescence (PL), its temperature and power dependences have been studied in InAs quantum dots (QDs) embedded in asymmetric InxGa1-y As/GaAs quantum wells (QWs) with variable InxGa1-x As compositions in the capping layer. Three stages for thermally activated decay of QD PL intensity have been revealed. A set of rate equations for exciton dynamics (relaxation into QWs and QDs, and thermal escape) are solved to analyze the mechanism of PL thermal decay. The variety of PL intensities and peak positions, as well as the activation energies of PL intensity decay in DWELL structures with different compositions of a capping layer are discussed.

AB - The photoluminescence (PL), its temperature and power dependences have been studied in InAs quantum dots (QDs) embedded in asymmetric InxGa1-y As/GaAs quantum wells (QWs) with variable InxGa1-x As compositions in the capping layer. Three stages for thermally activated decay of QD PL intensity have been revealed. A set of rate equations for exciton dynamics (relaxation into QWs and QDs, and thermal escape) are solved to analyze the mechanism of PL thermal decay. The variety of PL intensities and peak positions, as well as the activation energies of PL intensity decay in DWELL structures with different compositions of a capping layer are discussed.

KW - Exciton thermal escape

KW - Photoluminescence

KW - Quantum dots

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U2 - 10.1016/j.spmi.2008.09.010

DO - 10.1016/j.spmi.2008.09.010

M3 - Artículo

SN - 0749-6036

VL - 45

SP - 349

EP - 355

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 4-5

ER -

Exciton capture and thermal escape in InAs dot-in-a-well laser structures

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Keywords

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