Evolution of the optical transitions in Al_xGa_{1 - x}As/GaAs quantum well structures grown on GaAs buffers with different surface treatments by molecular beam epitaxy

Engineering & Materials Science

• Optical transitions 100%
• Semiconductor quantum wells 74%
• Molecular beam epitaxy 73%
• Surface treatment 49%
• Buffer layers 16%
• Spectroscopy 13%
• Etching 12%
• Temperature 9%
• Air 6%

Physics & Astronomy

• surface treatment 50%
• optical transition 49%
• molecular beam epitaxy 40%
• buffers 40%
• quantum wells 36%
• etching 7%
• temperature dependence 6%
• air 5%
• energy 5%
• spectroscopy 4%
• temperature 2%

Chemistry

• Molecular Beam Epitaxy 68%
• Optical Transition 65%
• Buffer Solution 30%
• Energy 22%
• Etching 21%
• Spectroscopy 15%
• Surface 15%