Evaluation of thin films intermixing by photoacoustic spectroscopy

I. Riech; M. Zambrano; A. Abelenda; F. Maldonado; A. Rojas-Marroquín; J. Jaime; A. Calderón; E. Marín

doi:10.1016/j.tsf.2021.138871

Evaluation of thin films intermixing by photoacoustic spectroscopy

I. Riech, M. Zambrano, A. Abelenda, F. Maldonado, A. Rojas-Marroquín, J. Jaime, A. Calderón, E. Marín

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

In this paper, we show the usefulness of photoacoustic spectroscopy (PAS) to monitor the intermixing at the thin films heterojunction. CdTe/CdS bilayers with different thicknesses were used to analyze the effect of S-Te interdiffusion on the PAS spectra. Unlike the spectrum measured by the optical transmittance technique, the photoacoustic spectrum shows an optical absorption band, in addition to the absorption edge corresponding to the CdTe layer. The position of the band changes from 2.31 to 1.93 eV depending on the CdTe layer thickness in the structure. The band shifts were associated with the composition of the ternary CdS_1-xTe_x alloy at the interface. Our interpretation of the results was supported by the PAS-Phase-Resolved and the X-Ray photoelectron spectroscopy techniques.

Original language	English
Article number	138871
Journal	Thin Solid Films
Volume	735
DOIs	https://doi.org/10.1016/j.tsf.2021.138871
State	Published - 1 Oct 2021
Externally published	Yes

Keywords

intermixing
photoacoustic spectroscopy
thin film heterostructure

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10.1016/j.tsf.2021.138871

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title = "Evaluation of thin films intermixing by photoacoustic spectroscopy",

abstract = "In this paper, we show the usefulness of photoacoustic spectroscopy (PAS) to monitor the intermixing at the thin films heterojunction. CdTe/CdS bilayers with different thicknesses were used to analyze the effect of S-Te interdiffusion on the PAS spectra. Unlike the spectrum measured by the optical transmittance technique, the photoacoustic spectrum shows an optical absorption band, in addition to the absorption edge corresponding to the CdTe layer. The position of the band changes from 2.31 to 1.93 eV depending on the CdTe layer thickness in the structure. The band shifts were associated with the composition of the ternary CdS1-xTex alloy at the interface. Our interpretation of the results was supported by the PAS-Phase-Resolved and the X-Ray photoelectron spectroscopy techniques.",

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T1 - Evaluation of thin films intermixing by photoacoustic spectroscopy

AU - Riech, I.

AU - Zambrano, M.

AU - Abelenda, A.

AU - Maldonado, F.

AU - Rojas-Marroquín, A.

AU - Jaime, J.

AU - Calderón, A.

AU - Marín, E.

PY - 2021/10/1

Y1 - 2021/10/1

N2 - In this paper, we show the usefulness of photoacoustic spectroscopy (PAS) to monitor the intermixing at the thin films heterojunction. CdTe/CdS bilayers with different thicknesses were used to analyze the effect of S-Te interdiffusion on the PAS spectra. Unlike the spectrum measured by the optical transmittance technique, the photoacoustic spectrum shows an optical absorption band, in addition to the absorption edge corresponding to the CdTe layer. The position of the band changes from 2.31 to 1.93 eV depending on the CdTe layer thickness in the structure. The band shifts were associated with the composition of the ternary CdS1-xTex alloy at the interface. Our interpretation of the results was supported by the PAS-Phase-Resolved and the X-Ray photoelectron spectroscopy techniques.

AB - In this paper, we show the usefulness of photoacoustic spectroscopy (PAS) to monitor the intermixing at the thin films heterojunction. CdTe/CdS bilayers with different thicknesses were used to analyze the effect of S-Te interdiffusion on the PAS spectra. Unlike the spectrum measured by the optical transmittance technique, the photoacoustic spectrum shows an optical absorption band, in addition to the absorption edge corresponding to the CdTe layer. The position of the band changes from 2.31 to 1.93 eV depending on the CdTe layer thickness in the structure. The band shifts were associated with the composition of the ternary CdS1-xTex alloy at the interface. Our interpretation of the results was supported by the PAS-Phase-Resolved and the X-Ray photoelectron spectroscopy techniques.

KW - intermixing

KW - photoacoustic spectroscopy

KW - thin film heterostructure

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VL - 735

JO - Thin Solid Films

JF - Thin Solid Films

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ER -

Evaluation of thin films intermixing by photoacoustic spectroscopy

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Keywords

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