Emission of Si nanoclusters of different phases in amorphous hydrogenated silicon

T. V. Torchynska

doi:10.1016/j.spmi.2008.10.005

Emission of Si nanoclusters of different phases in amorphous hydrogenated silicon

T. V. Torchynska

Escuela Superior de Física y Matemáticas (ESFM)

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

This paper presents the results of PL spectrum studies for Si nano-clusters in an amorphous silicon matrix. The four amorphous Si layers were prepared by the hot-wire CVD method on glass substrates at a temperature of 250 ^{{ring operator}}C and different filament temperatures in the range of 1650-1950 ^{{ring operator}}C. The joint analysis of PL and X ray diffraction results dependant on technological conditions has been done. PL bands deal with Si nanocrystals and amorphous Si nanoclusters are discussed as well.

Original language	English
Pages (from-to)	267-270
Number of pages	4
Journal	Superlattices and Microstructures
Volume	45
Issue number	4-5
DOIs	https://doi.org/10.1016/j.spmi.2008.10.005
State	Published - Apr 2009

Keywords

Amorphous silicon nanoclusters
HW-CVD
Photoluminescence
Silicon nanocrystals
XRD

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title = "Emission of Si nanoclusters of different phases in amorphous hydrogenated silicon",

abstract = "This paper presents the results of PL spectrum studies for Si nano-clusters in an amorphous silicon matrix. The four amorphous Si layers were prepared by the hot-wire CVD method on glass substrates at a temperature of 250 {ring operator}C and different filament temperatures in the range of 1650-1950 {ring operator}C. The joint analysis of PL and X ray diffraction results dependant on technological conditions has been done. PL bands deal with Si nanocrystals and amorphous Si nanoclusters are discussed as well.",

keywords = "Amorphous silicon nanoclusters, HW-CVD, Photoluminescence, Silicon nanocrystals, XRD",

author = "Torchynska, {T. V.}",

note = "Funding Information: This work was partially supported by CONACYT Mexico (project 058358) and by SIP-IPN, Mexico. The paper was presented on BIAMS 2008 Conference, Toledo, Spain (abst. N 49).",

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T1 - Emission of Si nanoclusters of different phases in amorphous hydrogenated silicon

AU - Torchynska, T. V.

N1 - Funding Information: This work was partially supported by CONACYT Mexico (project 058358) and by SIP-IPN, Mexico. The paper was presented on BIAMS 2008 Conference, Toledo, Spain (abst. N 49).

PY - 2009/4

Y1 - 2009/4

N2 - This paper presents the results of PL spectrum studies for Si nano-clusters in an amorphous silicon matrix. The four amorphous Si layers were prepared by the hot-wire CVD method on glass substrates at a temperature of 250 {ring operator}C and different filament temperatures in the range of 1650-1950 {ring operator}C. The joint analysis of PL and X ray diffraction results dependant on technological conditions has been done. PL bands deal with Si nanocrystals and amorphous Si nanoclusters are discussed as well.

AB - This paper presents the results of PL spectrum studies for Si nano-clusters in an amorphous silicon matrix. The four amorphous Si layers were prepared by the hot-wire CVD method on glass substrates at a temperature of 250 {ring operator}C and different filament temperatures in the range of 1650-1950 {ring operator}C. The joint analysis of PL and X ray diffraction results dependant on technological conditions has been done. PL bands deal with Si nanocrystals and amorphous Si nanoclusters are discussed as well.

KW - Amorphous silicon nanoclusters

KW - HW-CVD

KW - Photoluminescence

KW - Silicon nanocrystals

KW - XRD

UR - http://www.scopus.com/inward/record.url?scp=62949096799&partnerID=8YFLogxK

U2 - 10.1016/j.spmi.2008.10.005

DO - 10.1016/j.spmi.2008.10.005

M3 - Artículo

SN - 0749-6036

VL - 45

SP - 267

EP - 270

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 4-5

ER -

Emission of Si nanoclusters of different phases in amorphous hydrogenated silicon

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Keywords

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