@inproceedings{ad9a3fb0aeed4f599c0179a2cc169dab,
title = "Emission efficiency of crystalline and amorphous Si nanoclusters",
abstract = "The paper presents the results of emission efficiency comparison in crystalline and amorphous Si nanoclustes. Using X-ray diffraction (XRD) and photoluminescence (PL) methods the correlation between different PL bands and the volumes of Si nanocrystals and an amorphous (a-Si:H) phase have been revealed The size parameters of amorphous (a-Si:H) nanoclusters (quantum dots) and Si nanocrystals have been estimated from PL study and have been compared in the last case with that obtained by the XRD method. Using PL results the ratio between emission efficiencies for crystalline (ηcr) and amorphous (ηam) nanoclusters has been obtained and discussed. silicon crystalline and amorphous nanoclusters, X-ray diffraction, emission efficiency.",
keywords = "Emission efficiency, Silicon crystalline and amorphous nanoclusters, X-ray diffraction",
author = "Torchynska, {T. V.}",
year = "2010",
doi = "10.1109/SMICND.2010.5650229",
language = "Ingl{\'e}s",
isbn = "9781424457816",
series = "Proceedings of the International Semiconductor Conference, CAS",
pages = "99--102",
booktitle = "2010 33rd International Semiconductor Conference, CAS 2010 - Proceedings",
note = "2010 33rd International Semiconductor Conference, CAS 2010 ; Conference date: 11-10-2010 Through 13-10-2010",
}