TY - JOUR
T1 - Emission and Strain in InGaAs/GaAs structures with embedded InAs quantum dots
AU - Tamayo, Ricardo Cisneros
AU - Polupan, Georgiy
AU - Vega Macotela, Leonardo G.
PY - 2013
Y1 - 2013
N2 - The photoluminescence (PL) and X ray diffraction (XRD) have been studied in the GaAs /InxGa1-xAs /In0.15Ga0.85 As/GaAs quantum wells with embedded InAs quantum dots (QDs) in dependence on the composition of the capping InxGa1-xAs layers. The parameter x in capping InxGa1-xAs layers varied from the range 0.10-0.25. In concentration (x) increasing in capping layers is accompanied by the variation non-monotonously of InAs QD emission: the PL intensity and peak positions. To understand the reasons of emission variation, the PL temperature dependences and XRD have been investigated in strained QD structures. It was revealed that the process of Ga/In inter diffusion at the InxGa1-xAs/InAs QD interface and the level of elastic deformation are characterized by the dependence non monotonous versus parameter x in capping InxGa1-xAs layers. The physical reasons of the variation no monotonously of elastic strains in studied structures have been discussed.
AB - The photoluminescence (PL) and X ray diffraction (XRD) have been studied in the GaAs /InxGa1-xAs /In0.15Ga0.85 As/GaAs quantum wells with embedded InAs quantum dots (QDs) in dependence on the composition of the capping InxGa1-xAs layers. The parameter x in capping InxGa1-xAs layers varied from the range 0.10-0.25. In concentration (x) increasing in capping layers is accompanied by the variation non-monotonously of InAs QD emission: the PL intensity and peak positions. To understand the reasons of emission variation, the PL temperature dependences and XRD have been investigated in strained QD structures. It was revealed that the process of Ga/In inter diffusion at the InxGa1-xAs/InAs QD interface and the level of elastic deformation are characterized by the dependence non monotonous versus parameter x in capping InxGa1-xAs layers. The physical reasons of the variation no monotonously of elastic strains in studied structures have been discussed.
KW - III-V
KW - Nanostructure
KW - self-assembly
UR - http://www.scopus.com/inward/record.url?scp=84899545948&partnerID=8YFLogxK
U2 - 10.1557/opl.2013.300
DO - 10.1557/opl.2013.300
M3 - Artículo de la conferencia
AN - SCOPUS:84899545948
SN - 0272-9172
VL - 1534
SP - A63-A68
JO - Materials Research Society Symposium Proceedings
JF - Materials Research Society Symposium Proceedings
T2 - 21st International Materials Research Congress, IMRC 2012
Y2 - 12 August 2012 through 17 August 2012
ER -