Emission and strain in InGaAs/GaAs structures with embedded InAs quantum dots

Ricardo Cisneros Tamayo; Georgiy Polupan; Leonardo G. Vega Macotela

doi:10.1557/opl.2013.300

Emission and strain in InGaAs/GaAs structures with embedded InAs quantum dots

Ricardo Cisneros Tamayo, Georgiy Polupan, Leonardo G. Vega Macotela

Escuela Superior de Ingeniería Mecánica y Eléctrica (ESIME), Unidad Zacatenco

Research output: Contribution to journal › Article › peer-review

Abstract

The photoluminescence (PL) and X ray diffraction (XRD) have been studied in the GaAs/InxGa1-xAs/In0.15Ga0.85 As/GaAs quantum wells with embedded InAs quantum dots (QDs) in dependence on the composition of the capping InxGa1-xAs layers. The parameter x in capping InxGa1-xAs layers varied from the range 0.10-0.25. In concentration (x) increasing in capping layers is accompanied by the variation non-monotonously of InAs QD emission: the PL intensity and peak positions. To understand the reasons of emission variation, the PL temperature dependences and XRD have been investigated in strained QD structures. It was revealed that the process of Ga/In inter diffusion at the InxGa1-xAs/InAs QD interface and the level of elastic deformation are characterized by the dependence non monotonous versus parameter x in capping InxGa1-xAs layers. The physical reasons of the variation no monotonously of elastic strains in studied structures have been discussed.

Original language	English
Pages (from-to)	A63-A68
Journal	Animal
Volume	1534
Issue number	1
DOIs	https://doi.org/10.1557/opl.2013.300
State	Published - 18 Nov 2013

Keywords

III-V
Nanostructure
self-assembly

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10.1557/opl.2013.300

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title = "Emission and strain in InGaAs/GaAs structures with embedded InAs quantum dots",

abstract = "The photoluminescence (PL) and X ray diffraction (XRD) have been studied in the GaAs/InxGa1-xAs/In0.15Ga0.85 As/GaAs quantum wells with embedded InAs quantum dots (QDs) in dependence on the composition of the capping InxGa1-xAs layers. The parameter x in capping InxGa1-xAs layers varied from the range 0.10-0.25. In concentration (x) increasing in capping layers is accompanied by the variation non-monotonously of InAs QD emission: the PL intensity and peak positions. To understand the reasons of emission variation, the PL temperature dependences and XRD have been investigated in strained QD structures. It was revealed that the process of Ga/In inter diffusion at the InxGa1-xAs/InAs QD interface and the level of elastic deformation are characterized by the dependence non monotonous versus parameter x in capping InxGa1-xAs layers. The physical reasons of the variation no monotonously of elastic strains in studied structures have been discussed.",

keywords = "III-V, Nanostructure, self-assembly",

author = "Tamayo, {Ricardo Cisneros} and Georgiy Polupan and {Vega Macotela}, {Leonardo G.}",

note = "Publisher Copyright: {\textcopyright} 2013 Materials Research Society.",

year = "2013",

month = nov,

day = "18",

doi = "10.1557/opl.2013.300",

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AU - Tamayo, Ricardo Cisneros

AU - Polupan, Georgiy

AU - Vega Macotela, Leonardo G.

PY - 2013/11/18

Y1 - 2013/11/18

N2 - The photoluminescence (PL) and X ray diffraction (XRD) have been studied in the GaAs/InxGa1-xAs/In0.15Ga0.85 As/GaAs quantum wells with embedded InAs quantum dots (QDs) in dependence on the composition of the capping InxGa1-xAs layers. The parameter x in capping InxGa1-xAs layers varied from the range 0.10-0.25. In concentration (x) increasing in capping layers is accompanied by the variation non-monotonously of InAs QD emission: the PL intensity and peak positions. To understand the reasons of emission variation, the PL temperature dependences and XRD have been investigated in strained QD structures. It was revealed that the process of Ga/In inter diffusion at the InxGa1-xAs/InAs QD interface and the level of elastic deformation are characterized by the dependence non monotonous versus parameter x in capping InxGa1-xAs layers. The physical reasons of the variation no monotonously of elastic strains in studied structures have been discussed.

AB - The photoluminescence (PL) and X ray diffraction (XRD) have been studied in the GaAs/InxGa1-xAs/In0.15Ga0.85 As/GaAs quantum wells with embedded InAs quantum dots (QDs) in dependence on the composition of the capping InxGa1-xAs layers. The parameter x in capping InxGa1-xAs layers varied from the range 0.10-0.25. In concentration (x) increasing in capping layers is accompanied by the variation non-monotonously of InAs QD emission: the PL intensity and peak positions. To understand the reasons of emission variation, the PL temperature dependences and XRD have been investigated in strained QD structures. It was revealed that the process of Ga/In inter diffusion at the InxGa1-xAs/InAs QD interface and the level of elastic deformation are characterized by the dependence non monotonous versus parameter x in capping InxGa1-xAs layers. The physical reasons of the variation no monotonously of elastic strains in studied structures have been discussed.

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KW - self-assembly

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VL - 1534

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Emission and strain in InGaAs/GaAs structures with embedded InAs quantum dots

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