Emission and strain in InGaAs/GaAs quantum wells with InAs quantum dots obtained at different temperatures

Engineering & Materials Science

• Photoluminescence 100%
• Semiconductor quantum wells 96%
• Diffraction 44%
• X ray diffraction 40%
• Growth temperature 33%
• Epitaxial films 31%
• Temperature 24%
• Buffer layers 14%
• Substrates 14%
• Crystals 10%
• X rays 9%

Physics & Astronomy

• quantum dots 47%
• quantum wells 47%
• diffraction 32%
• photoluminescence 32%
• temperature 18%
• x rays 17%
• temperature dependence 9%
• shift 9%
• buffers 6%
• crystals 3%
• energy 2%

Chemistry

• Quantum Dot 54%
• Strain 43%
• Photoluminescence 35%
• Epitaxial Film 21%
• X-Ray Diffraction 15%
• Cubic Space Group 12%
• Buffer Solution 5%
• X-Ray 4%
• Energy 3%