Emission and HR-XRD study of MBE structures with InAs quantum dots and AlGaInAs strain reducing layers

Engineering & Materials Science

• Photoluminescence 100%
• Molecular beam epitaxy 95%
• X ray diffraction 60%
• Strain relaxation 34%
• Semiconductor quantum wells 32%
• Ground state 30%
• Full width at half maximum 30%
• Growth temperature 16%
• Chemical analysis 13%

Physics & Astronomy

• quantum dots 47%
• photoluminescence 43%
• high resolution 37%
• diffraction 32%
• x rays 27%
• quantum wells 15%
• ground state 13%
• shift 6%
• energy 6%
• temperature 3%

Chemistry

• Quantum Dot 54%
• Photoluminescence 47%
• Strain 43%
• Ground State 16%
• X-Ray Diffraction Method 10%
• Composite Material 10%
• Energy 9%