TY - JOUR
T1 - Emission and HR-XRD study of InGaAs/GaAs quantum wells with InAs quantum dots grown at different temperatures
AU - Vega-Macotela, L. G.
AU - Torchynska, T. V.
AU - Polupan, G.
N1 - Publisher Copyright:
© 2017, Springer Science+Business Media, LLC.
PY - 2017/12/1
Y1 - 2017/12/1
N2 - GaAs/In0.15Ga0.85As/GaAs QWs with embedded InAs QDs grown at different temperatures have been studied by means of the photoluminescence (PL), X ray diffraction (XRD) and high resolution XRD (HR-XRD) methods. PL study has detected varying of QD parameters and HR-XRD permits monitoring the QW parameters. It is shown that increasing the QD growth temperature up to 510 °C leads to raising the QD sizes, to shift of QD emission peak to low energy and increasing the PL intensity of QDs. Simultaneously Ga/In atom intermixing is realized mainly between the InGaAs buffer and InAs wetting layers and did not influent on the InAs QD composition. At higher QD growth temperatures (525–535 °C) the PL intensity of QDs decreases significantly together with decreasing the QD heights and the shift of PL peaks into higher energy. Fitting the HR-XRD results has revealed that Ga/In atom intermixing involves the composition changes in buffer and wetting layers, as well as in QDs. The mentioned optical and structural effects have been discussed in details.
AB - GaAs/In0.15Ga0.85As/GaAs QWs with embedded InAs QDs grown at different temperatures have been studied by means of the photoluminescence (PL), X ray diffraction (XRD) and high resolution XRD (HR-XRD) methods. PL study has detected varying of QD parameters and HR-XRD permits monitoring the QW parameters. It is shown that increasing the QD growth temperature up to 510 °C leads to raising the QD sizes, to shift of QD emission peak to low energy and increasing the PL intensity of QDs. Simultaneously Ga/In atom intermixing is realized mainly between the InGaAs buffer and InAs wetting layers and did not influent on the InAs QD composition. At higher QD growth temperatures (525–535 °C) the PL intensity of QDs decreases significantly together with decreasing the QD heights and the shift of PL peaks into higher energy. Fitting the HR-XRD results has revealed that Ga/In atom intermixing involves the composition changes in buffer and wetting layers, as well as in QDs. The mentioned optical and structural effects have been discussed in details.
UR - http://www.scopus.com/inward/record.url?scp=85027979811&partnerID=8YFLogxK
U2 - 10.1007/s10854-017-7717-5
DO - 10.1007/s10854-017-7717-5
M3 - Artículo
SN - 0957-4522
VL - 28
SP - 17778
EP - 17783
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 23
ER -