Abstract
The paper presents the photoluminescence (PL) study of InAs quantum dots (QDs) embedded in the asymmetric GaAs/In xGa 1-xAs/In 0.15Ga 0.85As/GaAs quantum wells (QWs) with the different compositions of capping In xGa 1-xAs layers. The composition of the buffer In 0.15Ga 0.85As layer was the same in all studied QD structures, but the In content (parameter x) in the capping In xGa 1-xAs layers varied within the range 0.100.25. The In concentration (x) increase in the In xGa 1-xAs capping layers is accompanied by the variation non-monotonously of InAs QD emission: PL intensity and peak positions. To understand the reasons of PL variation, the PL temperature dependences and X ray diffraction (XRD) have been investigated. It was revealed that the level of elastic deformation (elastic strain) and the Ga/In interdiffusion at the In xGa 1-xAs/InAs QD interface are characterized by the non-monotonous dependences versus parameter x. The physical reasons for the non-monotonous variation of the elastic strains and PL parameters in studied QD structures have been discussed.
Original language | English |
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Pages (from-to) | 1270-1273 |
Number of pages | 4 |
Journal | Journal of Luminescence |
Volume | 132 |
Issue number | 5 |
DOIs | |
State | Published - May 2012 |
Keywords
- Elastic strain
- Emission
- InAs quantum dots
- InGaAs/GaAs quantum wells
- XRD