TY - JOUR
T1 - Elemental depth profiles of MgB2/Si precursor and superconducting films
AU - Andrade, E.
AU - Chromik, Š
AU - Jergel, Mi
AU - Jergel, Ma
AU - Falcony, C.
AU - Štrbík, V.
AU - Rocha, M. F.
N1 - Funding Information:
The authors wish to thank E.P. Zavala and R. Cuellar for their support in maintaining and operating the accelerator. This work has been supported by the IAEA contract no. 11365 R/0.
PY - 2004/6
Y1 - 2004/6
N2 - The elemental composition and depth profiles of MgB2/Si(100) and MbB2/Si(111) films were studied by IBA methods. Films were prepared by sequential e-beam evaporation of B and Mg components onto silicon substrates kept at room temperature. One half of the Mg-B precursors were then annealed in situ at 630 °C to obtain superconducting MgB2 films. Both types of films, i.e. not-annealed as well as those annealed, were then bombarded with 2400 keV 3He+. Nuclear reaction particle peaks with positive Q values are induced by 3He+ bombardment on 10B, 11B, 16O and 12C nuclei. The IBA method applied is actually a combination of Rutherford backscattering/ nuclear reaction (RBS/NRA) for analyzing MgB2/Si films. The best zero resistance Tco value of the MgB2/Si superconducting films was 29.3 K. The IBA of the MgB2/Si superconducting films shows that Mg and B diffuse into the silicon substrate and that the Mg concentration on the film surface is almost zero. X-ray diffraction indicates that Mg2Si grains were formed at the film/substrate interface. Low concentrations of oxygen were also found in the films either in the form of MgO or B2O 3.
AB - The elemental composition and depth profiles of MgB2/Si(100) and MbB2/Si(111) films were studied by IBA methods. Films were prepared by sequential e-beam evaporation of B and Mg components onto silicon substrates kept at room temperature. One half of the Mg-B precursors were then annealed in situ at 630 °C to obtain superconducting MgB2 films. Both types of films, i.e. not-annealed as well as those annealed, were then bombarded with 2400 keV 3He+. Nuclear reaction particle peaks with positive Q values are induced by 3He+ bombardment on 10B, 11B, 16O and 12C nuclei. The IBA method applied is actually a combination of Rutherford backscattering/ nuclear reaction (RBS/NRA) for analyzing MgB2/Si films. The best zero resistance Tco value of the MgB2/Si superconducting films was 29.3 K. The IBA of the MgB2/Si superconducting films shows that Mg and B diffuse into the silicon substrate and that the Mg concentration on the film surface is almost zero. X-ray diffraction indicates that Mg2Si grains were formed at the film/substrate interface. Low concentrations of oxygen were also found in the films either in the form of MgO or B2O 3.
KW - Depth profiles
KW - E-beam deposition
KW - IBA methods
KW - MgB thin films
UR - http://www.scopus.com/inward/record.url?scp=2342517390&partnerID=8YFLogxK
U2 - 10.1016/j.nimb.2004.01.160
DO - 10.1016/j.nimb.2004.01.160
M3 - Artículo de la conferencia
AN - SCOPUS:2342517390
SN - 0168-583X
VL - 219-220
SP - 768
EP - 772
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
IS - 1-4
T2 - Proceedings of the Sixteenth International Conference on Ion
Y2 - 29 June 2003 through 4 July 2003
ER -