TY - JOUR
T1 - Electronic states and optical properties of silicon nanocrystals
AU - Guzmán, D.
AU - Corona, U.
AU - Cruz, M.
N1 - Funding Information:
This work was supported by CGPI-IPN under contract No. 20021027. The use of the computing facilities of the DGSCA-UNAM is acknowledged.
PY - 2003/5
Y1 - 2003/5
N2 - Photoluminescence properties of nanometer Si-based materials have motivated a great deal of experimental and theoretical research effort because they exhibit favourable applications in opto-electronic devices. The quantum confinement effect of photoexcited carriers within nanocrystallites was mainly proposed to be responsible for the visible luminescence from these materials. In this work, the electronic states and optical transition properties of Si nanocrystals are studied by means of an sp3s* semiempirical tight-binding approximation and supercell model, in which the silicon nanocrystals are columns of square cross-section with width from a to 7a, where a is the lattice constant. The calculations have been carried out for light polarized in the [1 0 0] direction, i.e., perpendicular to the wire alignment. We present the dependence of the imaginary part of the dielectric function on the quantum confinement within two different schemes, which are applied and compared.
AB - Photoluminescence properties of nanometer Si-based materials have motivated a great deal of experimental and theoretical research effort because they exhibit favourable applications in opto-electronic devices. The quantum confinement effect of photoexcited carriers within nanocrystallites was mainly proposed to be responsible for the visible luminescence from these materials. In this work, the electronic states and optical transition properties of Si nanocrystals are studied by means of an sp3s* semiempirical tight-binding approximation and supercell model, in which the silicon nanocrystals are columns of square cross-section with width from a to 7a, where a is the lattice constant. The calculations have been carried out for light polarized in the [1 0 0] direction, i.e., perpendicular to the wire alignment. We present the dependence of the imaginary part of the dielectric function on the quantum confinement within two different schemes, which are applied and compared.
KW - Dielectric constant
KW - Silicon nanocrystals
KW - Tight binding
UR - http://www.scopus.com/inward/record.url?scp=0037402649&partnerID=8YFLogxK
U2 - 10.1016/S0022-2313(02)00587-2
DO - 10.1016/S0022-2313(02)00587-2
M3 - Artículo de la conferencia
AN - SCOPUS:0037402649
SN - 0022-2313
VL - 102-103
SP - 487
EP - 491
JO - Journal of Luminescence
JF - Journal of Luminescence
IS - SPEC
T2 - Proceedings of the 2002 International Conference on Luminescence
Y2 - 24 August 2002 through 29 August 2002
ER -