Electrodiffusion of shallow donors in CdS crystals

N. E. Korsunskaya; I. V. Markevich; T. V. Torchinskaya; M. K. Sheinkman

doi:10.1088/0022-3719/13/16/007

Electrodiffusion of shallow donors in CdS crystals

N. E. Korsunskaya, I. V. Markevich, T. V. Torchinskaya, M. K. Sheinkman

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31 Scopus citations

Abstract

Electrodiffusion of lattice defects in CdS, CdS:Li, CdS:Cu crystals and its effect on the photoelectric and luminescent properties of these crystals is investigated. Evidence is found to show that in the temperature range 250-400K, shallow donors, namely Li_i and Cd_i, drift in an electric field.

Original language	English
Article number	007
Pages (from-to)	2975-2978
Number of pages	4
Journal	Journal of Physics C: Solid State Physics
Volume	13
Issue number	16
DOIs	https://doi.org/10.1088/0022-3719/13/16/007
State	Published - 1980
Externally published	Yes

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title = "Electrodiffusion of shallow donors in CdS crystals",

abstract = "Electrodiffusion of lattice defects in CdS, CdS:Li, CdS:Cu crystals and its effect on the photoelectric and luminescent properties of these crystals is investigated. Evidence is found to show that in the temperature range 250-400K, shallow donors, namely Lii and Cdi, drift in an electric field.",

author = "Korsunskaya, {N. E.} and Markevich, {I. V.} and Torchinskaya, {T. V.} and Sheinkman, {M. K.}",

year = "1980",

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T1 - Electrodiffusion of shallow donors in CdS crystals

AU - Korsunskaya, N. E.

AU - Markevich, I. V.

AU - Torchinskaya, T. V.

AU - Sheinkman, M. K.

PY - 1980

Y1 - 1980

N2 - Electrodiffusion of lattice defects in CdS, CdS:Li, CdS:Cu crystals and its effect on the photoelectric and luminescent properties of these crystals is investigated. Evidence is found to show that in the temperature range 250-400K, shallow donors, namely Lii and Cdi, drift in an electric field.

AB - Electrodiffusion of lattice defects in CdS, CdS:Li, CdS:Cu crystals and its effect on the photoelectric and luminescent properties of these crystals is investigated. Evidence is found to show that in the temperature range 250-400K, shallow donors, namely Lii and Cdi, drift in an electric field.

UR - http://www.scopus.com/inward/record.url?scp=0005636531&partnerID=8YFLogxK

U2 - 10.1088/0022-3719/13/16/007

DO - 10.1088/0022-3719/13/16/007

M3 - Artículo

SN - 0022-3719

VL - 13

SP - 2975

EP - 2978

JO - Journal of Physics C: Solid State Physics

JF - Journal of Physics C: Solid State Physics

IS - 16

M1 - 007

ER -

Electrodiffusion of shallow donors in CdS crystals

Abstract

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