TY - GEN
T1 - Electrical properties of GaN layers grown by metal organic vapor phase epitaxy (MOVPE)
AU - Rangel-Kuoppa, Victor Tapio
AU - Aguilar, Cesia Guarneros
AU - Sánchez-Reséndiz, Victor
PY - 2011
Y1 - 2011
N2 - The electrical properties of three un-doped GaN samples grown at low pressure by Metal Organic Vapor Phase Epitaxy (MOVPE) on sapphire substrates are reported. Two different growth temperatures of 900°C and 950°C were used, for 90 min. Also, two trimethylgallium flow fluxes were set (5.39 μmole/minute and 8.39 μmole/minute). The temperature dependent Hall (T-Hall) technique was used, between 35 K and 373 K. The resistivity of our samples fluctuated between 3 and 24mΩ×cm. They were temperature dependent and were explained by two thermally activated processes, with activation energies of 20 and 70 meV. For the two samples grown at 900°C, the mobilities and the charge carrier densities were temperature independent with values of 10 and 20cm 2V -1s -1, and 6×10 19 and 5×10 19cm -3, respectively. For the sample grown at 950°C, the mobility showed temperature dependence to the power of +1/3 and the charge carrier density a thermally activated dependence with an activation energy of 5 meV.
AB - The electrical properties of three un-doped GaN samples grown at low pressure by Metal Organic Vapor Phase Epitaxy (MOVPE) on sapphire substrates are reported. Two different growth temperatures of 900°C and 950°C were used, for 90 min. Also, two trimethylgallium flow fluxes were set (5.39 μmole/minute and 8.39 μmole/minute). The temperature dependent Hall (T-Hall) technique was used, between 35 K and 373 K. The resistivity of our samples fluctuated between 3 and 24mΩ×cm. They were temperature dependent and were explained by two thermally activated processes, with activation energies of 20 and 70 meV. For the two samples grown at 900°C, the mobilities and the charge carrier densities were temperature independent with values of 10 and 20cm 2V -1s -1, and 6×10 19 and 5×10 19cm -3, respectively. For the sample grown at 950°C, the mobility showed temperature dependence to the power of +1/3 and the charge carrier density a thermally activated dependence with an activation energy of 5 meV.
KW - GaN
KW - Hall
KW - MOVPE
KW - charge carrier density
KW - mobility
KW - resistivity
UR - http://www.scopus.com/inward/record.url?scp=84855487910&partnerID=8YFLogxK
U2 - 10.1063/1.3666245
DO - 10.1063/1.3666245
M3 - Contribución a la conferencia
AN - SCOPUS:84855487910
SN - 9780735410022
T3 - AIP Conference Proceedings
SP - 35
EP - 36
BT - Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
T2 - 30th International Conference on the Physics of Semiconductors, ICPS-30
Y2 - 25 July 2010 through 30 July 2010
ER -