Effects of in situ annealing of GaAs(100) substrates on the subsequent growth of InAs quantum dots by molecular beam epitaxy

Engineering & Materials Science

• Molecular beam epitaxy 100%
• Annealing 64%
• High resolution electron microscopy 54%
• Spectroscopy 54%
• Substrates 45%
• Atomic force microscopy 41%
• Reflection high energy electron diffraction 33%
• Scanning electron microscopy 25%
• Arsenic 23%
• Buffer layers 22%
• Optical properties 20%
• Structural properties 17%
• Heat treatment 14%
• Derivatives 13%
• Temperature 12%

Chemistry

• Molecular Beam Epitaxy 92%
• Quantum Dot 57%
• Annealing 50%
• Spectroscopy 24%
• Reflection High Energy Electron Diffraction 20%
• Atomic Force Microscopy 20%
• Scanning Electron Microscopy 15%
• Optical Property 9%
• Buffer Solution 8%
• Energy 6%
• Time 4%
• Surface 4%