TY - GEN
T1 - Effect of Thermal Annealing up to 200°C on SnO Thin Films Deposited at Room Temperature by Direct Current Magnetron Sputtering
AU - Martinez-Arreola, Samuel
AU - Garduno, Salvador I.
AU - Hernandez-Como, Norberto
AU - Estrada, Magali
N1 - Publisher Copyright:
© 2020 IEEE.
PY - 2020/2
Y1 - 2020/2
N2 - The effect of thermal annealing at low temperature (≤200°C) on some structural, optical, and electrical properties of tin (Sn) layers, deposited at room temperature by direct current magnetron sputtering in an argon and oxygen reactive plasma, was studied to obtain tin monoxide (SnO). The Sn layers were 70±5 nm thick. The oxygen partial pressure (OPP) was fixed at 7% or 9%. Subsequently, deposited films were thermally annealed (TA) for 1 hour at temperatures between 160° C and 200° C in air environment. X-ray diffraction patterns of films deposited at 7% and 9% of OPP showed a dominant Sn phase oriented to different crystallographic planes. Once the deposited films were annealed at 200° C, a phase of polycrystalline SnO became predominant for the deposition process at 9% of OPP. The optical bandgap energy, the refractive index and the extinction coefficient of the annealed layers varied with the TA temperature. Finally, four-point-probe measurements showed the resistivity variation of the films from as-deposited to thermally annealed up to 200° C.
AB - The effect of thermal annealing at low temperature (≤200°C) on some structural, optical, and electrical properties of tin (Sn) layers, deposited at room temperature by direct current magnetron sputtering in an argon and oxygen reactive plasma, was studied to obtain tin monoxide (SnO). The Sn layers were 70±5 nm thick. The oxygen partial pressure (OPP) was fixed at 7% or 9%. Subsequently, deposited films were thermally annealed (TA) for 1 hour at temperatures between 160° C and 200° C in air environment. X-ray diffraction patterns of films deposited at 7% and 9% of OPP showed a dominant Sn phase oriented to different crystallographic planes. Once the deposited films were annealed at 200° C, a phase of polycrystalline SnO became predominant for the deposition process at 9% of OPP. The optical bandgap energy, the refractive index and the extinction coefficient of the annealed layers varied with the TA temperature. Finally, four-point-probe measurements showed the resistivity variation of the films from as-deposited to thermally annealed up to 200° C.
KW - lowerature annealing process
KW - p-type metal oxide semiconductor
KW - reactive DC-magnetron sputtering
KW - tin monoxide
UR - http://www.scopus.com/inward/record.url?scp=85085012296&partnerID=8YFLogxK
U2 - 10.1109/LAEDC49063.2020.9073260
DO - 10.1109/LAEDC49063.2020.9073260
M3 - Contribución a la conferencia
AN - SCOPUS:85085012296
T3 - LAEDC 2020 - Latin American Electron Devices Conference
BT - LAEDC 2020 - Latin American Electron Devices Conference
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2020 Latin American Electron Devices Conference, LAEDC 2020
Y2 - 25 February 2020 through 28 February 2020
ER -