TY - GEN
T1 - Effect of li-doping on photoluminescence of screen-printed zinc oxide films
AU - Khomenkova, L.
AU - Kushnirenko, V.
AU - Osipenok, M.
AU - Avramenko, K.
AU - Polishchuk, Y.
AU - Markevich, I.
AU - Streichuk, V.
AU - Kladko, V.
AU - Borkovska, L.
AU - Kryshtab, T.
N1 - Publisher Copyright:
© 2015 Materials Research Society.
PY - 2015
Y1 - 2015
N2 - Undoped and Li-doped ZnO films were fabricated by screen printing approach on sapphire substrate. The effect of Li doping and annealing temperature on the luminescent, optical, electrical and structural properties of the films has been investigated by the photoluminescence (PL), Raman scattering, conductivity, Atomic Force microscopy and X-ray diffraction (XRD) methods. The XRD study revealed that the films have polycrystalline wurtzite structure with grain sizes ranging from 26 to 38 nm. In the undoped ZnO films, the increase of annealing temperature from 800 to 1000°C resulted in the increase of the grain sizes, film conductivity and the intensity of the ultraviolet PL. The introduction of Li of low concentration of 0.003 wt % at 800°C or 900°C allows producing the low-resistive films with enhanced ultraviolet PL and reduced density of crystalline defects. Highly doped films (with 0.3 wt % of Li) were found to be semi-insulating with deteriorated PL properties irrespectively of the annealing temperature. It is shown that introduction of Li in the ZnO films affects their PL spectra mainly via the evolution of the film crystallinity and the density of intrinsic defects.
AB - Undoped and Li-doped ZnO films were fabricated by screen printing approach on sapphire substrate. The effect of Li doping and annealing temperature on the luminescent, optical, electrical and structural properties of the films has been investigated by the photoluminescence (PL), Raman scattering, conductivity, Atomic Force microscopy and X-ray diffraction (XRD) methods. The XRD study revealed that the films have polycrystalline wurtzite structure with grain sizes ranging from 26 to 38 nm. In the undoped ZnO films, the increase of annealing temperature from 800 to 1000°C resulted in the increase of the grain sizes, film conductivity and the intensity of the ultraviolet PL. The introduction of Li of low concentration of 0.003 wt % at 800°C or 900°C allows producing the low-resistive films with enhanced ultraviolet PL and reduced density of crystalline defects. Highly doped films (with 0.3 wt % of Li) were found to be semi-insulating with deteriorated PL properties irrespectively of the annealing temperature. It is shown that introduction of Li in the ZnO films affects their PL spectra mainly via the evolution of the film crystallinity and the density of intrinsic defects.
UR - http://www.scopus.com/inward/record.url?scp=84944675829&partnerID=8YFLogxK
U2 - 10.1557/opl.2015.424
DO - 10.1557/opl.2015.424
M3 - Contribución a la conferencia
AN - SCOPUS:84944675829
T3 - Materials Research Society Symposium Proceedings
SP - 167
EP - 177
BT - Structural and Chemical Characterization of Metals, Alloys, and Compounds - 2014
A2 - Campos, Ramiro Perez
A2 - Cuevas, Antonio Contreras
A2 - Munoz, Rodrigo A. Esparza
PB - Materials Research Society
T2 - 23rd International Materials Research Congress, IMRC 2014
Y2 - 17 August 2014 through 21 August 2014
ER -