Effect of doping on properties of Zno:Cu and Zno:Ag thin films

T. Kryshtab; V. S. Khomchenko; V. B. Khachatryan; N. N. Roshchina; J. A. Andraca-Adame; O. S. Lytvyn; V. I. Kushnirenko

doi:10.1007/s10854-007-9256-y

Effect of doping on properties of Zno:Cu and Zno:Ag thin films

T. Kryshtab, V. S. Khomchenko, V. B. Khachatryan, N. N. Roshchina, J. A. Andraca-Adame, O. S. Lytvyn, V. I. Kushnirenko

Escuela Superior de Física y Matemáticas (ESFM)

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

ZnO:Cu and ZnS thin films were grown by metal-organic chemical vapour deposition (MOCVD) under atmospheric pressure onto glass substrates. The ZnO:Ag films were fabricated from ZnS films by non-vacuum method that consists of simultaneous oxidation and Ag-doping by the close spaced evaporation (CSE) of silver at the temperature of 500-600 °C. Photo-assisted rapid thermal annealing (PARTA) at ambient air during 10-30 s at the temperature of 700-800 °C was used for the ZnO:Cu films. The samples were studied by X-ray diffraction technique (XRD), atomic force microscopy (AFM), and photoluminescence (PL) measurements. The grain size of ZnO:Cu films increased with an increase of Cu concentration. PL spectra of as-deposited ZnO:Cu films depended on Cu concentration and contained the bands typical for the copper. After PARTA at high temperature the emission maximum shifted towards the short-wave region. During the fabrication of ZnO:Ag films the grain growth process was strongly affected by the Ag loading level. The grain size increased with an increase of Ag concentration and ZnO:Ag films with surface roughness of 8 nm were obtained. Observed 385 nm PL peak for these samples can be attributed to the exciton-exciton emission that proves the high quality of the obtained ZnO:Ag films.

Translated title of the contribution	Efecto del dopaje en las propiedades de películas delgadas de Zno:Cu y Zno:Ag
Original language	English
Pages (from-to)	1115-1118
Number of pages	4
Journal	Journal of Materials Science: Materials in Electronics
Volume	18
Issue number	11
DOIs	https://doi.org/10.1007/s10854-007-9256-y
State	Published - Nov 2007

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title = "Effect of doping on properties of Zno:Cu and Zno:Ag thin films",

abstract = "ZnO:Cu and ZnS thin films were grown by metal-organic chemical vapour deposition (MOCVD) under atmospheric pressure onto glass substrates. The ZnO:Ag films were fabricated from ZnS films by non-vacuum method that consists of simultaneous oxidation and Ag-doping by the close spaced evaporation (CSE) of silver at the temperature of 500-600 °C. Photo-assisted rapid thermal annealing (PARTA) at ambient air during 10-30 s at the temperature of 700-800 °C was used for the ZnO:Cu films. The samples were studied by X-ray diffraction technique (XRD), atomic force microscopy (AFM), and photoluminescence (PL) measurements. The grain size of ZnO:Cu films increased with an increase of Cu concentration. PL spectra of as-deposited ZnO:Cu films depended on Cu concentration and contained the bands typical for the copper. After PARTA at high temperature the emission maximum shifted towards the short-wave region. During the fabrication of ZnO:Ag films the grain growth process was strongly affected by the Ag loading level. The grain size increased with an increase of Ag concentration and ZnO:Ag films with surface roughness of 8 nm were obtained. Observed 385 nm PL peak for these samples can be attributed to the exciton-exciton emission that proves the high quality of the obtained ZnO:Ag films.",

author = "T. Kryshtab and Khomchenko, {V. S.} and Khachatryan, {V. B.} and Roshchina, {N. N.} and Andraca-Adame, {J. A.} and Lytvyn, {O. S.} and Kushnirenko, {V. I.}",

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doi = "10.1007/s10854-007-9256-y",

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AU - Kryshtab, T.

AU - Khomchenko, V. S.

AU - Khachatryan, V. B.

AU - Roshchina, N. N.

AU - Andraca-Adame, J. A.

AU - Lytvyn, O. S.

AU - Kushnirenko, V. I.

PY - 2007/11

Y1 - 2007/11

N2 - ZnO:Cu and ZnS thin films were grown by metal-organic chemical vapour deposition (MOCVD) under atmospheric pressure onto glass substrates. The ZnO:Ag films were fabricated from ZnS films by non-vacuum method that consists of simultaneous oxidation and Ag-doping by the close spaced evaporation (CSE) of silver at the temperature of 500-600 °C. Photo-assisted rapid thermal annealing (PARTA) at ambient air during 10-30 s at the temperature of 700-800 °C was used for the ZnO:Cu films. The samples were studied by X-ray diffraction technique (XRD), atomic force microscopy (AFM), and photoluminescence (PL) measurements. The grain size of ZnO:Cu films increased with an increase of Cu concentration. PL spectra of as-deposited ZnO:Cu films depended on Cu concentration and contained the bands typical for the copper. After PARTA at high temperature the emission maximum shifted towards the short-wave region. During the fabrication of ZnO:Ag films the grain growth process was strongly affected by the Ag loading level. The grain size increased with an increase of Ag concentration and ZnO:Ag films with surface roughness of 8 nm were obtained. Observed 385 nm PL peak for these samples can be attributed to the exciton-exciton emission that proves the high quality of the obtained ZnO:Ag films.

AB - ZnO:Cu and ZnS thin films were grown by metal-organic chemical vapour deposition (MOCVD) under atmospheric pressure onto glass substrates. The ZnO:Ag films were fabricated from ZnS films by non-vacuum method that consists of simultaneous oxidation and Ag-doping by the close spaced evaporation (CSE) of silver at the temperature of 500-600 °C. Photo-assisted rapid thermal annealing (PARTA) at ambient air during 10-30 s at the temperature of 700-800 °C was used for the ZnO:Cu films. The samples were studied by X-ray diffraction technique (XRD), atomic force microscopy (AFM), and photoluminescence (PL) measurements. The grain size of ZnO:Cu films increased with an increase of Cu concentration. PL spectra of as-deposited ZnO:Cu films depended on Cu concentration and contained the bands typical for the copper. After PARTA at high temperature the emission maximum shifted towards the short-wave region. During the fabrication of ZnO:Ag films the grain growth process was strongly affected by the Ag loading level. The grain size increased with an increase of Ag concentration and ZnO:Ag films with surface roughness of 8 nm were obtained. Observed 385 nm PL peak for these samples can be attributed to the exciton-exciton emission that proves the high quality of the obtained ZnO:Ag films.

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ER -

Effect of doping on properties of Zno:Cu and Zno:Ag thin films

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