Development of low-threshold current stripe lasers from GaInAsSb/GaAlAsSb DH wafers emitting at 2.2μm

N. B. Patel; M. B.Z. Morosini; A. C.F. Da Silveira; A. A.G. Von Zuben; M. S.S. Loural; J. L. Herrera-Pérez

doi:10.1117/12.146931

Development of low-threshold current stripe lasers from GaInAsSb/GaAlAsSb DH wafers emitting at 2.2μm

N. B. Patel, M. B.Z. Morosini, A. C.F. Da Silveira, A. A.G. Von Zuben, M. S.S. Loural, J. L. Herrera-Pérez

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Abstract

© 1993 SPIE. All rights reserved. We report the Ga0.86In0.14As0.13Sb0.87 room temperature refractive index value obtained from direct reflectivity measurements and also estimated from laser transverse far field pattern measurements. The value n = 3.78 obtained is higher than previous theoretical calculations and is high enough to support a good optical confinement in DH lasers with 27% Al in the confining layers. We also show that the active layer low resistivity gives the main contribution to the high threshold current (Ith) for narrow stripe lasers. This is partly solved by making the active region n-type. The minimum Ith obtained for n-type active layer lasers was 290mA compared to 800mA for p-type active layer lasers, the broad area threshold current being the same (3kA/cm2) in both cases.

Original language	American English
Pages	404-413
Number of pages	10
DOIs	https://doi.org/10.1117/12.146931
State	Published - 16 Jun 1993
Externally published	Yes
Event	Proceedings of SPIE - The International Society for Optical Engineering - Duration: 31 Aug 2007 → …

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Conference	Proceedings of SPIE - The International Society for Optical Engineering
Period	31/08/07 → …

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title = "Development of low-threshold current stripe lasers from GaInAsSb/GaAlAsSb DH wafers emitting at 2.2μm",

abstract = "{\textcopyright} 1993 SPIE. All rights reserved. We report the Ga0.86In0.14As0.13Sb0.87 room temperature refractive index value obtained from direct reflectivity measurements and also estimated from laser transverse far field pattern measurements. The value n = 3.78 obtained is higher than previous theoretical calculations and is high enough to support a good optical confinement in DH lasers with 27% Al in the confining layers. We also show that the active layer low resistivity gives the main contribution to the high threshold current (Ith) for narrow stripe lasers. This is partly solved by making the active region n-type. The minimum Ith obtained for n-type active layer lasers was 290mA compared to 800mA for p-type active layer lasers, the broad area threshold current being the same (3kA/cm2) in both cases.",

author = "Patel, {N. B.} and Morosini, {M. B.Z.} and {Da Silveira}, {A. C.F.} and {Von Zuben}, {A. A.G.} and Loural, {M. S.S.} and Herrera-P{\'e}rez, {J. L.}",

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month = jun,

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doi = "10.1117/12.146931",

language = "American English",

pages = "404--413",

note = "Proceedings of SPIE - The International Society for Optical Engineering ; Conference date: 31-08-2007",

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T1 - Development of low-threshold current stripe lasers from GaInAsSb/GaAlAsSb DH wafers emitting at 2.2μm

AU - Patel, N. B.

AU - Morosini, M. B.Z.

AU - Da Silveira, A. C.F.

AU - Von Zuben, A. A.G.

AU - Loural, M. S.S.

AU - Herrera-Pérez, J. L.

PY - 1993/6/16

Y1 - 1993/6/16

N2 - © 1993 SPIE. All rights reserved. We report the Ga0.86In0.14As0.13Sb0.87 room temperature refractive index value obtained from direct reflectivity measurements and also estimated from laser transverse far field pattern measurements. The value n = 3.78 obtained is higher than previous theoretical calculations and is high enough to support a good optical confinement in DH lasers with 27% Al in the confining layers. We also show that the active layer low resistivity gives the main contribution to the high threshold current (Ith) for narrow stripe lasers. This is partly solved by making the active region n-type. The minimum Ith obtained for n-type active layer lasers was 290mA compared to 800mA for p-type active layer lasers, the broad area threshold current being the same (3kA/cm2) in both cases.

AB - © 1993 SPIE. All rights reserved. We report the Ga0.86In0.14As0.13Sb0.87 room temperature refractive index value obtained from direct reflectivity measurements and also estimated from laser transverse far field pattern measurements. The value n = 3.78 obtained is higher than previous theoretical calculations and is high enough to support a good optical confinement in DH lasers with 27% Al in the confining layers. We also show that the active layer low resistivity gives the main contribution to the high threshold current (Ith) for narrow stripe lasers. This is partly solved by making the active region n-type. The minimum Ith obtained for n-type active layer lasers was 290mA compared to 800mA for p-type active layer lasers, the broad area threshold current being the same (3kA/cm2) in both cases.

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Development of low-threshold current stripe lasers from GaInAsSb/GaAlAsSb DH wafers emitting at 2.2μm

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