Development of low-threshold current stripe lasers from GaInAsSb/GaAlAsSb DH wafers emitting at 2.2μm

N. B. Patel; M. B.Z. Morosini; A. C.F. Da Silveira; A. A.G. Von Zuben; M. S.S. Loural; J. L. Herrera-Pérez

doi:10.1117/12.146931

Development of low-threshold current stripe lasers from GaInAsSb/GaAlAsSb DH wafers emitting at 2.2μm

N. B. Patel, M. B.Z. Morosini, A. C.F. Da Silveira, A. A.G. Von Zuben, M. S.S. Loural, J. L. Herrera-Pérez

Research output: Contribution to journal › Conference article › peer-review

Abstract

We report the Ga_0.86In_0.14As_0.13Sb_0.87 room temperature refractive index value obtained from direct reflectivity measurements and also estimated from laser transverse far field pattern measurements. The value n = 3.78 obtained is higher than previous theoretical calculations and is high enough to support a good optical confinement in DH lasers with 27% Al in the confining layers. We also show that the active layer low resistivity gives the main contribution to the high threshold current (I_th) for narrow stripe lasers. This is partly solved by making the active region n-type. The minimum I_th obtained for n-type active layer lasers was 290mA compared to 800mA for p-type active layer lasers, the broad area threshold current being the same (3kA/cm²) in both cases.

Original language	English
Pages (from-to)	404-413
Number of pages	10
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	1850
DOIs	https://doi.org/10.1117/12.146931
State	Published - 16 Jun 1993
Externally published	Yes
Event	Laser Diode Technology and Applications V 1993 - Los Angeles, United States Duration: 17 Jan 1993 → 22 Jan 1993

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title = "Development of low-threshold current stripe lasers from GaInAsSb/GaAlAsSb DH wafers emitting at 2.2μm",

abstract = "We report the Ga0.86In0.14As0.13Sb0.87 room temperature refractive index value obtained from direct reflectivity measurements and also estimated from laser transverse far field pattern measurements. The value n = 3.78 obtained is higher than previous theoretical calculations and is high enough to support a good optical confinement in DH lasers with 27% Al in the confining layers. We also show that the active layer low resistivity gives the main contribution to the high threshold current (Ith) for narrow stripe lasers. This is partly solved by making the active region n-type. The minimum Ith obtained for n-type active layer lasers was 290mA compared to 800mA for p-type active layer lasers, the broad area threshold current being the same (3kA/cm2) in both cases.",

author = "Patel, {N. B.} and Morosini, {M. B.Z.} and {Da Silveira}, {A. C.F.} and {Von Zuben}, {A. A.G.} and Loural, {M. S.S.} and Herrera-P{\'e}rez, {J. L.}",

year = "1993",

month = jun,

day = "16",

doi = "10.1117/12.146931",

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volume = "1850",

pages = "404--413",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

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TY - JOUR

T1 - Development of low-threshold current stripe lasers from GaInAsSb/GaAlAsSb DH wafers emitting at 2.2μm

AU - Patel, N. B.

AU - Morosini, M. B.Z.

AU - Da Silveira, A. C.F.

AU - Von Zuben, A. A.G.

AU - Loural, M. S.S.

AU - Herrera-Pérez, J. L.

PY - 1993/6/16

Y1 - 1993/6/16

N2 - We report the Ga0.86In0.14As0.13Sb0.87 room temperature refractive index value obtained from direct reflectivity measurements and also estimated from laser transverse far field pattern measurements. The value n = 3.78 obtained is higher than previous theoretical calculations and is high enough to support a good optical confinement in DH lasers with 27% Al in the confining layers. We also show that the active layer low resistivity gives the main contribution to the high threshold current (Ith) for narrow stripe lasers. This is partly solved by making the active region n-type. The minimum Ith obtained for n-type active layer lasers was 290mA compared to 800mA for p-type active layer lasers, the broad area threshold current being the same (3kA/cm2) in both cases.

AB - We report the Ga0.86In0.14As0.13Sb0.87 room temperature refractive index value obtained from direct reflectivity measurements and also estimated from laser transverse far field pattern measurements. The value n = 3.78 obtained is higher than previous theoretical calculations and is high enough to support a good optical confinement in DH lasers with 27% Al in the confining layers. We also show that the active layer low resistivity gives the main contribution to the high threshold current (Ith) for narrow stripe lasers. This is partly solved by making the active region n-type. The minimum Ith obtained for n-type active layer lasers was 290mA compared to 800mA for p-type active layer lasers, the broad area threshold current being the same (3kA/cm2) in both cases.

UR - http://www.scopus.com/inward/record.url?scp=85075734113&partnerID=8YFLogxK

U2 - 10.1117/12.146931

DO - 10.1117/12.146931

M3 - Artículo de la conferencia

AN - SCOPUS:85075734113

SN - 0277-786X

VL - 1850

SP - 404

EP - 413

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Laser Diode Technology and Applications V 1993

Y2 - 17 January 1993 through 22 January 1993

ER -

Development of low-threshold current stripe lasers from GaInAsSb/GaAlAsSb DH wafers emitting at 2.2μm

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