@inproceedings{068aac12aaf64d89a4257266468e681a,
title = "Development of 2.2 μm emission Ridge Waveguide lasers with low threshold GalnAsSb/GaAlAsSb DH wafers",
abstract = "We show that the development of 2.2μm emission low threshold Ridge-Waveguide lasers from GalnAsSb/GaAlAsSb DH wafers is limited by the excessive current spread in the low resistivity p-type active layer.",
author = "Morosini, {M. B.Z.} and Herrera-P{\'e}rez, {J. L.} and {Da Silveira}, {A. C.F.} and {Von Zuben}, {A. A.G.} and Loural, {M. S.S.} and Patel, {N. B.}",
note = "Publisher Copyright: {\textcopyright} 1992 Institute of Electrical and Electronics Engineers Inc. All rights reserved.; 13th IEEE International Semiconductor Laser Conference, ISLC 1992 ; Conference date: 21-09-1992 Through 25-09-1992",
year = "1992",
doi = "10.1109/ISLC.1992.763571",
language = "Ingl{\'e}s",
series = "Conference Digest - IEEE International Semiconductor Laser Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "60--61",
booktitle = "Conference Digest - 13th IEEE International Semiconductor Laser Conference",
address = "Estados Unidos",
}