Design of 20 GHz high performance LC-VCOs in a 52 GHz fT SiGe:C BiCMOS technology

José Cruz Nunez-Perez; Jacques Verdier; Christian Gontrand

doi:10.1016/j.mejo.2009.11.006

Design of 20 GHz high performance LC-VCOs in a 52 GHz f_T SiGe:C BiCMOS technology

José Cruz Nunez-Perez, Jacques Verdier, Christian Gontrand

Research output: Contribution to journal › Article › peer-review

Abstract

The design and analysis of fully integrated 20 GHz voltage controlled oscillators (VCOs) for low cost and low power communication system are presented in this paper. Two differential topographies have been studied: balanced Colpitts VCO and LC-VCO using a cross-coupled differential pair. We have focused on oscillation frequency, tuning range, phase noise, output power optimization and buffer stage specifications. SiGe:C hetero-junction bipolar transistors of a 52 GHz cut-off frequency have been used and produced via a monolithic BiCMOS technology.

Original language	English
Pages (from-to)	41-50
Number of pages	10
Journal	Microelectronics Journal
Volume	41
Issue number	1
DOIs	https://doi.org/10.1016/j.mejo.2009.11.006
State	Published - Jan 2010
Externally published	Yes

Keywords

BiCMOS
Noises
Phase noise
Voltage controlled oscillator

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10.1016/j.mejo.2009.11.006

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abstract = "The design and analysis of fully integrated 20 GHz voltage controlled oscillators (VCOs) for low cost and low power communication system are presented in this paper. Two differential topographies have been studied: balanced Colpitts VCO and LC-VCO using a cross-coupled differential pair. We have focused on oscillation frequency, tuning range, phase noise, output power optimization and buffer stage specifications. SiGe:C hetero-junction bipolar transistors of a 52 GHz cut-off frequency have been used and produced via a monolithic BiCMOS technology.",

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AB - The design and analysis of fully integrated 20 GHz voltage controlled oscillators (VCOs) for low cost and low power communication system are presented in this paper. Two differential topographies have been studied: balanced Colpitts VCO and LC-VCO using a cross-coupled differential pair. We have focused on oscillation frequency, tuning range, phase noise, output power optimization and buffer stage specifications. SiGe:C hetero-junction bipolar transistors of a 52 GHz cut-off frequency have been used and produced via a monolithic BiCMOS technology.

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KW - Noises

KW - Phase noise

KW - Voltage controlled oscillator

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JO - Microelectronics Journal

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Design of 20 GHz high performance LC-VCOs in a 52 GHz f_T SiGe:C BiCMOS technology

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Keywords

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