TY - JOUR
T1 - Defect control in room temperature deposited cadmium sulfide thin films by pulsed laser deposition
AU - Hernandez-Como, N.
AU - Martinez-Landeros, V.
AU - Mejia, I.
AU - Aguirre-Tostado, F. S.
AU - Nascimento, C. D.
AU - De, G.
AU - Krug, C.
AU - Quevedo-Lopez, M. A.
N1 - Funding Information:
This work is partially funded by the Air Force Office of Scientific Research (AFOSR) contract number FA9550-10-1-0183 , and Consejo Nacional de Ciencia y Tecnología (CONACyT) project 158281 .
PY - 2014/1/1
Y1 - 2014/1/1
N2 - The control of defects in cadmium sulfide thin films and its impact on the resulting CdS optical and electrical characteristics are studied. Sulfur vacancies and cadmium interstitial concentrations in the CdS films are controlled using the ambient pressure during pulsed laser deposition. CdS film resistivities ranging from 10- 1 to 104 ω-cm are achieved. Hall Effect measurements show that the carrier concentration ranges from 1019 to 1013 cm- 3 and is responsible for the observed resistivity variation. Hall mobility varies from 2 to 12 cm 2/V-s for the same pressure regime. Although the energy bandgap remains unaffected (~ 2.42 eV), the optical transmittance is reduced due to the increase of defects in the CdS films. Rutherford back scattering spectroscopy shows the dependence of the CdS films stoichiometry with deposition pressure. The presence of CdS defects is attributed to more energetic species reaching the substrate, inducing surface damage in the CdS films during pulsed laser deposition.
AB - The control of defects in cadmium sulfide thin films and its impact on the resulting CdS optical and electrical characteristics are studied. Sulfur vacancies and cadmium interstitial concentrations in the CdS films are controlled using the ambient pressure during pulsed laser deposition. CdS film resistivities ranging from 10- 1 to 104 ω-cm are achieved. Hall Effect measurements show that the carrier concentration ranges from 1019 to 1013 cm- 3 and is responsible for the observed resistivity variation. Hall mobility varies from 2 to 12 cm 2/V-s for the same pressure regime. Although the energy bandgap remains unaffected (~ 2.42 eV), the optical transmittance is reduced due to the increase of defects in the CdS films. Rutherford back scattering spectroscopy shows the dependence of the CdS films stoichiometry with deposition pressure. The presence of CdS defects is attributed to more energetic species reaching the substrate, inducing surface damage in the CdS films during pulsed laser deposition.
KW - Cadmium sulfide
KW - Carrier concentration
KW - Pulsed laser deposition
KW - Sulfur vacancies
UR - http://www.scopus.com/inward/record.url?scp=84890310797&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2013.10.168
DO - 10.1016/j.tsf.2013.10.168
M3 - Artículo
SN - 0040-6090
VL - 550
SP - 665
EP - 668
JO - Thin Solid Films
JF - Thin Solid Films
ER -