DC and high frequency performance of 0.1 μm n-type Si/Si0.6Ge0.4 MODFET with fMAX = 188 GHZ at 300K and fMAX = 230 GHZ at 50k

M. Enciso-Aguilar; F. Aniel; P. Crozat; R. Adde; H. J. Herzog; T. Hackbarth; U. König; H. Von Känel

doi:10.1049/el:20031182

DC and high frequency performance of 0.1 μm n-type Si/Si_0.6Ge_0.4 MODFET with f_MAX = 188 GHZ at 300K and f_MAX = 230 GHZ at 50k

M. Enciso-Aguilar, F. Aniel, P. Crozat, R. Adde, H. J. Herzog, T. Hackbarth, U. König, H. Von Känel

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Maximum oscillation frequency f_MAX as high as 188 GHz at 300K and 227 GHz at 50K are reported for a 0.1 × 30 μm² n-type strained Si/Si_0.6Ge_0.4 modulation doped field-effect transistor (n-MODFET) together with high quality DC characteristics. These f_MAX are the highest values reported so far for Si-based hetero-FETs. The frequency performances are discussed using analytical expressions of f_MAX and f_Ti (intrinsic current gain cutoff frequency) together with the main equivalent circuit elements extracted.

Original language	English
Pages (from-to)	149-151
Number of pages	3
Journal	Electronics Letters
Volume	39
Issue number	1
DOIs	https://doi.org/10.1049/el:20031182
State	Published - 9 Jan 2003
Externally published	Yes

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title = "DC and high frequency performance of 0.1 μm n-type Si/Si0.6Ge0.4 MODFET with fMAX = 188 GHZ at 300K and fMAX = 230 GHZ at 50k",

abstract = "Maximum oscillation frequency fMAX as high as 188 GHz at 300K and 227 GHz at 50K are reported for a 0.1 × 30 μm2 n-type strained Si/Si0.6Ge0.4 modulation doped field-effect transistor (n-MODFET) together with high quality DC characteristics. These fMAX are the highest values reported so far for Si-based hetero-FETs. The frequency performances are discussed using analytical expressions of fMAX and fTi (intrinsic current gain cutoff frequency) together with the main equivalent circuit elements extracted.",

author = "M. Enciso-Aguilar and F. Aniel and P. Crozat and R. Adde and Herzog, {H. J.} and T. Hackbarth and U. K{\"o}nig and {Von K{\"a}nel}, H.",

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T1 - DC and high frequency performance of 0.1 μm n-type Si/Si0.6Ge0.4 MODFET with fMAX = 188 GHZ at 300K and fMAX = 230 GHZ at 50k

AU - Enciso-Aguilar, M.

AU - Aniel, F.

AU - Crozat, P.

AU - Adde, R.

AU - Herzog, H. J.

AU - Hackbarth, T.

AU - König, U.

AU - Von Känel, H.

PY - 2003/1/9

Y1 - 2003/1/9

N2 - Maximum oscillation frequency fMAX as high as 188 GHz at 300K and 227 GHz at 50K are reported for a 0.1 × 30 μm2 n-type strained Si/Si0.6Ge0.4 modulation doped field-effect transistor (n-MODFET) together with high quality DC characteristics. These fMAX are the highest values reported so far for Si-based hetero-FETs. The frequency performances are discussed using analytical expressions of fMAX and fTi (intrinsic current gain cutoff frequency) together with the main equivalent circuit elements extracted.

AB - Maximum oscillation frequency fMAX as high as 188 GHz at 300K and 227 GHz at 50K are reported for a 0.1 × 30 μm2 n-type strained Si/Si0.6Ge0.4 modulation doped field-effect transistor (n-MODFET) together with high quality DC characteristics. These fMAX are the highest values reported so far for Si-based hetero-FETs. The frequency performances are discussed using analytical expressions of fMAX and fTi (intrinsic current gain cutoff frequency) together with the main equivalent circuit elements extracted.

UR - http://www.scopus.com/inward/record.url?scp=0037426969&partnerID=8YFLogxK

U2 - 10.1049/el:20031182

DO - 10.1049/el:20031182

M3 - Artículo

SN - 0013-5194

VL - 39

SP - 149

EP - 151

JO - Electronics Letters

JF - Electronics Letters

IS - 1

ER -

DC and high frequency performance of 0.1 μm n-type Si/Si_0.6Ge_0.4 MODFET with f_MAX = 188 GHZ at 300K and f_MAX = 230 GHZ at 50k

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