TY - GEN
T1 - DC and AC characterization of PTFT inverters using Poly(9, 9-dioctylfluorene-co-Bithiophene) (F8T2)
AU - Avila, M. F.
AU - Estrada, M.
AU - Cerdeira, A.
AU - Resendiz, L.
PY - 2013
Y1 - 2013
N2 - Poly(9, 9-dioctylfluorene-co-Bithiophene) (F8T2) is used for the fabrication of p-type Polymeric Thin-Film Transistors (PTFT's), which can show high Ion/Ioff ratio in the transfer characteristics. In this work the Active Saturated Load Inverter (ASLI), fabricated with Poly (methyl methacrylate) (PMMA) as the dielectric film and F8T2 as the active semiconductor PTFTs, is analyzed and simulated using SmartSpice, where a compact model, UMEM, previously developed by our group was included. Specifics of the AC measurements of these devices are discussed.
AB - Poly(9, 9-dioctylfluorene-co-Bithiophene) (F8T2) is used for the fabrication of p-type Polymeric Thin-Film Transistors (PTFT's), which can show high Ion/Ioff ratio in the transfer characteristics. In this work the Active Saturated Load Inverter (ASLI), fabricated with Poly (methyl methacrylate) (PMMA) as the dielectric film and F8T2 as the active semiconductor PTFTs, is analyzed and simulated using SmartSpice, where a compact model, UMEM, previously developed by our group was included. Specifics of the AC measurements of these devices are discussed.
KW - PTFT
KW - invertors with PTFT
KW - polymeric transistors
UR - http://www.scopus.com/inward/record.url?scp=84875749279&partnerID=8YFLogxK
U2 - 10.1109/CDE.2013.6481368
DO - 10.1109/CDE.2013.6481368
M3 - Contribución a la conferencia
AN - SCOPUS:84875749279
SN - 9781467346689
T3 - Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013
SP - 163
EP - 166
BT - Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013
T2 - 9th Spanish Conference on Electron Devices, CDE 2013
Y2 - 12 February 2013 through 14 February 2013
ER -