TY - JOUR
T1 - Cupric oxide (CuO)/zinc oxide (ZnO) heterojunction diode with low turn-on voltage
AU - López, Roberto
AU - Villa-Sánchez, Gerardo
AU - Vivaldo de la Cruz, Israel
AU - Encarnación-Gómez, Cecilia
AU - Castrejón-Sánchez, Víctor Hugo
AU - Coyopol, Antonio
AU - Mastache, Jorge Edmundo
AU - Leyva-Porras, Cesar
N1 - Publisher Copyright:
© 2021
PY - 2021/3
Y1 - 2021/3
N2 - The p-n junction is the fundamental form of an electronic semiconductor device. A p-CuO/n-ZnO heterojunction diode was formed by using thermal evaporation and thermal oxidation techniques. Cupric oxide (CuO) films of 300 µm in thickness were obtained by thermal oxidation of Cu foils. Zinc oxide (ZnO) films of 30 µm in thickness were prepared in two process steps: firstly, thermal evaporation of Zn at atmospheric pressure, and then thermal oxidation to Zn films. The p-CuO/n-ZnO heterojunction diode was formed by performing the steps of ZnO deposition on the surface of the CuO films, and completed by deposition of silver electrical contacts on the top and on the bottom sides of the heterostructure. Structural, morphological, and electrical properties of CuO and ZnO were studied by X-ray diffraction (XRD), Raman spectroscopy, Uv–Vis DRS, scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Hall effect techniques. Current-voltage (I-V) measurements were performed to the p-CuO/n-ZnO heterojunction diode. Structural characterization to CuO confirmed that pure, crystalline and (1 1 1) textured films can be obtained by thermal oxidation of Cu. ZnO films showed a polycrystalline structure without preferred orientation. The band gap of CuO and ZnO were 1.51 and 3.21 eV, respectively. Cross-sectional SEM and TEM images confirmed the formation of the p-CuO/n-ZnO heterojunction diode. Hall measurements confirmed the p-type conductivity of CuO and the n-type conductivity of ZnO. Also, the carrier concentration and Hall mobility of CuO films were 9.54 × 1012 cm−3 and 267 cm2 V−1 s−1, respectively. ZnO films exhibited a carrier concentration and Hall mobility of 3.69 × 1012 cm−3 and 22.18 cm2 V−1 s−1, respectively. The I-V measurement showed that the p-CuO/n-ZnO heterojunction exhibits a low turn-on voltage of about 0.8 V and a breakdown voltage of about 38 V. Electrical parameter such as rectification ratio and ideality factor were also calculated. An energy band-diagram of the CuO/ZnO heterojunction was proposed, where a built-in voltage of 0.57 eV was observed.
AB - The p-n junction is the fundamental form of an electronic semiconductor device. A p-CuO/n-ZnO heterojunction diode was formed by using thermal evaporation and thermal oxidation techniques. Cupric oxide (CuO) films of 300 µm in thickness were obtained by thermal oxidation of Cu foils. Zinc oxide (ZnO) films of 30 µm in thickness were prepared in two process steps: firstly, thermal evaporation of Zn at atmospheric pressure, and then thermal oxidation to Zn films. The p-CuO/n-ZnO heterojunction diode was formed by performing the steps of ZnO deposition on the surface of the CuO films, and completed by deposition of silver electrical contacts on the top and on the bottom sides of the heterostructure. Structural, morphological, and electrical properties of CuO and ZnO were studied by X-ray diffraction (XRD), Raman spectroscopy, Uv–Vis DRS, scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Hall effect techniques. Current-voltage (I-V) measurements were performed to the p-CuO/n-ZnO heterojunction diode. Structural characterization to CuO confirmed that pure, crystalline and (1 1 1) textured films can be obtained by thermal oxidation of Cu. ZnO films showed a polycrystalline structure without preferred orientation. The band gap of CuO and ZnO were 1.51 and 3.21 eV, respectively. Cross-sectional SEM and TEM images confirmed the formation of the p-CuO/n-ZnO heterojunction diode. Hall measurements confirmed the p-type conductivity of CuO and the n-type conductivity of ZnO. Also, the carrier concentration and Hall mobility of CuO films were 9.54 × 1012 cm−3 and 267 cm2 V−1 s−1, respectively. ZnO films exhibited a carrier concentration and Hall mobility of 3.69 × 1012 cm−3 and 22.18 cm2 V−1 s−1, respectively. The I-V measurement showed that the p-CuO/n-ZnO heterojunction exhibits a low turn-on voltage of about 0.8 V and a breakdown voltage of about 38 V. Electrical parameter such as rectification ratio and ideality factor were also calculated. An energy band-diagram of the CuO/ZnO heterojunction was proposed, where a built-in voltage of 0.57 eV was observed.
KW - Cupric oxide
KW - Heterojunction diode
KW - Thermal evaporation
KW - Thermal oxidation
KW - Turn-on voltage
KW - Zinc oxide
UR - http://www.scopus.com/inward/record.url?scp=85100320211&partnerID=8YFLogxK
U2 - 10.1016/j.rinp.2021.103891
DO - 10.1016/j.rinp.2021.103891
M3 - Artículo
AN - SCOPUS:85100320211
SN - 2211-3797
VL - 22
JO - Results in Physics
JF - Results in Physics
M1 - 103891
ER -