Cubic CdS thin films studied by spectroscopic ellipsometry

J. L. Martínez, G. Martínez, G. Torres-Delgado, O. Guzmán, P. Del Angel, O. Zelaya-Angel, R. Lozada-Morales

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

CdS polycrystalline films were grown onto glass substrates by chemical bath deposition (CBD) and characterized by spectroellipsometry, X-ray diffraction and transmission electron microscopy. The X-ray diffraction patterns of the samples showed the presence of a CdS cubic phase (β-CdS) and of Cd2SiO4 as interfacial material. Using electron diffraction it was possible to index the films as cubic CdS. From effective dielectric function measurements and from reported optical data for the dielectric function of cubic CdS crystals, grown by vapour phase epitaxy, it was possible to fit the experimental data to an effective medium approximation, and to deduce the film thickness, the void fraction and the field screening.

Original languageEnglish
Pages (from-to)399-403
Number of pages5
JournalJournal of Materials Science: Materials in Electronics
Volume8
Issue number6
DOIs
StatePublished - 1997
Externally publishedYes

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