TY - JOUR
T1 - Cubic CdS thin films studied by spectroscopic ellipsometry
AU - Martínez, J. L.
AU - Martínez, G.
AU - Torres-Delgado, G.
AU - Guzmán, O.
AU - Del Angel, P.
AU - Zelaya-Angel, O.
AU - Lozada-Morales, R.
N1 - Funding Information:
The authors acknowledge the useful comments on the manuscript made by Professor David Allred. This work was partially supported by Consejo Nacional de Ciencia y Tecnología (CONACyT-México).
PY - 1997
Y1 - 1997
N2 - CdS polycrystalline films were grown onto glass substrates by chemical bath deposition (CBD) and characterized by spectroellipsometry, X-ray diffraction and transmission electron microscopy. The X-ray diffraction patterns of the samples showed the presence of a CdS cubic phase (β-CdS) and of Cd2SiO4 as interfacial material. Using electron diffraction it was possible to index the films as cubic CdS. From effective dielectric function measurements and from reported optical data for the dielectric function of cubic CdS crystals, grown by vapour phase epitaxy, it was possible to fit the experimental data to an effective medium approximation, and to deduce the film thickness, the void fraction and the field screening.
AB - CdS polycrystalline films were grown onto glass substrates by chemical bath deposition (CBD) and characterized by spectroellipsometry, X-ray diffraction and transmission electron microscopy. The X-ray diffraction patterns of the samples showed the presence of a CdS cubic phase (β-CdS) and of Cd2SiO4 as interfacial material. Using electron diffraction it was possible to index the films as cubic CdS. From effective dielectric function measurements and from reported optical data for the dielectric function of cubic CdS crystals, grown by vapour phase epitaxy, it was possible to fit the experimental data to an effective medium approximation, and to deduce the film thickness, the void fraction and the field screening.
UR - http://www.scopus.com/inward/record.url?scp=0031387230&partnerID=8YFLogxK
U2 - 10.1023/A:1018555826924
DO - 10.1023/A:1018555826924
M3 - Artículo
AN - SCOPUS:0031387230
SN - 0957-4522
VL - 8
SP - 399
EP - 403
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 6
ER -