TY - JOUR
T1 - Cu-Doped ZnO thin films deposited by a sol-gel process using two copper precursors
T2 - Gas-sensing performance in a propane atmosphere
AU - Gómez-Pozos, Heberto
AU - Arredondo, Emma Julia Luna
AU - Álvarez, Arturo Maldonado
AU - Biswal, Rajesh
AU - Kudriavtsev, Yuriy
AU - Pérez, Jaime Vega
AU - Casallas-Moreno, Yenny Lucero
AU - Amador, María de la Luz Olvera
N1 - Publisher Copyright:
© 2016 by the authors.
PY - 2016
Y1 - 2016
N2 - A study on the propane gas-sensing properties of Cu-doped ZnO thin films is presented in this work. The films were deposited on glass substrates by sol-gel and dip coating methods, using zinc acetate as a zinc precursor, copper acetate and copper chloride as precursors for doping. For higher sensitivity values, two film thickness values are controlled by the six and eight dippings, whereas for doping, three dippings were used, irrespective of the Cu precursor. The film structure was analyzed by X-ray diffractometry, and the analysis of the surface morphology and film composition was made through scanning electron microscopy (SEM) and secondary ion mass spectroscopy (SIMS), respectively. The sensing properties of Cu-doped ZnO thin films were then characterized in a propane atmosphere, C3H8, at different concentration levels and different operation temperatures of 100, 200 and 300 °C. Cu-doped ZnO films doped with copper chloride presented the highest sensitivity of approximately 6 × 104, confirming a strong dependence on the dopant precursor type. The results obtained in this work show that the use of Cu as a dopant in ZnO films processed by sol-gel produces excellent catalysts for sensing C3H8 gas.
AB - A study on the propane gas-sensing properties of Cu-doped ZnO thin films is presented in this work. The films were deposited on glass substrates by sol-gel and dip coating methods, using zinc acetate as a zinc precursor, copper acetate and copper chloride as precursors for doping. For higher sensitivity values, two film thickness values are controlled by the six and eight dippings, whereas for doping, three dippings were used, irrespective of the Cu precursor. The film structure was analyzed by X-ray diffractometry, and the analysis of the surface morphology and film composition was made through scanning electron microscopy (SEM) and secondary ion mass spectroscopy (SIMS), respectively. The sensing properties of Cu-doped ZnO thin films were then characterized in a propane atmosphere, C3H8, at different concentration levels and different operation temperatures of 100, 200 and 300 °C. Cu-doped ZnO films doped with copper chloride presented the highest sensitivity of approximately 6 × 104, confirming a strong dependence on the dopant precursor type. The results obtained in this work show that the use of Cu as a dopant in ZnO films processed by sol-gel produces excellent catalysts for sensing C3H8 gas.
KW - Copper dopant
KW - Gas sensor
KW - Sol-gel
UR - http://www.scopus.com/inward/record.url?scp=84960119101&partnerID=8YFLogxK
U2 - 10.3390/ma9020087
DO - 10.3390/ma9020087
M3 - Artículo
SN - 1996-1944
VL - 9
JO - Materials
JF - Materials
IS - 2
M1 - 87
ER -