Copper telluride thin films grown by pulsed laser deposition

F. De Moure-Flores; J. G. Quiñones-Galván; A. Guillén-Cervantes; A. Hernández-Hernández; M. de la L. Olvera; J. Santoyo-Salazar; G. Contreras-Puente; M. Zapata-Torres; M. Meléndez-Lira

doi:10.1016/j.surfcoat.2012.12.012

Copper telluride thin films grown by pulsed laser deposition

F. De Moure-Flores, J. G. Quiñones-Galván, A. Guillén-Cervantes, A. Hernández-Hernández, M. de la L. Olvera, J. Santoyo-Salazar, G. Contreras-Puente, M. Zapata-Torres, M. Meléndez-Lira

Escuela Superior de Física y Matemáticas (ESFM)

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Copper telluride thin films were deposited by pulsed laser deposition on Corning glass substrates using powders of Cu₂Te as target. Films were grown at substrate temperatures ranging from room temperature to 300°C. The structural, compositional and electrical properties were analyzed as a function of the growth temperature. The X-ray diffraction shows that the crystalline structure of the films is strongly related to the growth temperature. The EDS analysis indicates that the stoichiometry of the Cu_xTe films depends on the growth temperature. For a substrate temperature of 300°C a Cu₂Te film with hexagonal phase was obtained.

Translated title of the contribution	Películas delgadas de telururo de cobre cultivadas por deposición láser pulsada
Original language	English
Pages (from-to)	181-183
Number of pages	3
Journal	Surface and Coatings Technology
Volume	217
DOIs	https://doi.org/10.1016/j.surfcoat.2012.12.012
State	Published - 25 Feb 2013

Keywords

Back electrode
CdTe solar cells
Copper telluride films
Morphology
Pulsed laser deposition

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10.1016/j.surfcoat.2012.12.012

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@article{56f3aed6101f4067874f6627b027396d,

title = "Copper telluride thin films grown by pulsed laser deposition",

abstract = "Copper telluride thin films were deposited by pulsed laser deposition on Corning glass substrates using powders of Cu2Te as target. Films were grown at substrate temperatures ranging from room temperature to 300°C. The structural, compositional and electrical properties were analyzed as a function of the growth temperature. The X-ray diffraction shows that the crystalline structure of the films is strongly related to the growth temperature. The EDS analysis indicates that the stoichiometry of the CuxTe films depends on the growth temperature. For a substrate temperature of 300°C a Cu2Te film with hexagonal phase was obtained.",

keywords = "Back electrode, CdTe solar cells, Copper telluride films, Morphology, Pulsed laser deposition",

author = "{De Moure-Flores}, F. and Qui{\~n}ones-Galv{\'a}n, {J. G.} and A. Guill{\'e}n-Cervantes and A. Hern{\'a}ndez-Hern{\'a}ndez and Olvera, {M. de la L.} and J. Santoyo-Salazar and G. Contreras-Puente and M. Zapata-Torres and M. Mel{\'e}ndez-Lira",

note = "Funding Information: We acknowledge the technical support of Marcela Guerrero, A. Garc{\'i}a-Sotelo, A.B. Soto, Zacar{\'i}as Rivera and Josue Esau Romero Ibarra from CINVESTAV-IPN and the partial support by CONACyT-Mexico .",

year = "2013",

month = feb,

day = "25",

doi = "10.1016/j.surfcoat.2012.12.012",

language = "Ingl{\'e}s",

volume = "217",

pages = "181--183",

journal = "Surface and Coatings Technology",

issn = "0257-8972",

}

TY - JOUR

T1 - Copper telluride thin films grown by pulsed laser deposition

AU - De Moure-Flores, F.

AU - Quiñones-Galván, J. G.

AU - Guillén-Cervantes, A.

AU - Hernández-Hernández, A.

AU - Olvera, M. de la L.

AU - Santoyo-Salazar, J.

AU - Contreras-Puente, G.

AU - Zapata-Torres, M.

AU - Meléndez-Lira, M.

N1 - Funding Information: We acknowledge the technical support of Marcela Guerrero, A. García-Sotelo, A.B. Soto, Zacarías Rivera and Josue Esau Romero Ibarra from CINVESTAV-IPN and the partial support by CONACyT-Mexico .

PY - 2013/2/25

Y1 - 2013/2/25

N2 - Copper telluride thin films were deposited by pulsed laser deposition on Corning glass substrates using powders of Cu2Te as target. Films were grown at substrate temperatures ranging from room temperature to 300°C. The structural, compositional and electrical properties were analyzed as a function of the growth temperature. The X-ray diffraction shows that the crystalline structure of the films is strongly related to the growth temperature. The EDS analysis indicates that the stoichiometry of the CuxTe films depends on the growth temperature. For a substrate temperature of 300°C a Cu2Te film with hexagonal phase was obtained.

AB - Copper telluride thin films were deposited by pulsed laser deposition on Corning glass substrates using powders of Cu2Te as target. Films were grown at substrate temperatures ranging from room temperature to 300°C. The structural, compositional and electrical properties were analyzed as a function of the growth temperature. The X-ray diffraction shows that the crystalline structure of the films is strongly related to the growth temperature. The EDS analysis indicates that the stoichiometry of the CuxTe films depends on the growth temperature. For a substrate temperature of 300°C a Cu2Te film with hexagonal phase was obtained.

KW - Back electrode

KW - CdTe solar cells

KW - Copper telluride films

KW - Morphology

KW - Pulsed laser deposition

UR - http://www.scopus.com/inward/record.url?scp=84873268705&partnerID=8YFLogxK

U2 - 10.1016/j.surfcoat.2012.12.012

DO - 10.1016/j.surfcoat.2012.12.012

M3 - Artículo

AN - SCOPUS:84873268705

SN - 0257-8972

VL - 217

SP - 181

EP - 183

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

ER -

Copper telluride thin films grown by pulsed laser deposition

Abstract

Keywords

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