TY - JOUR
T1 - Control of the formation of self-assembled nano-voids at the GaN/GaAs interface
AU - Perez-Hernandez, Briseida G.
AU - Zambrano-Serrano, Mario A.
AU - Gallardo-Hernández, Salvador
AU - Casallas-Moreno, Yenny L.
AU - Guillén-Cervantes, Ángel
AU - López-López, Máximo
N1 - Publisher Copyright:
© 2021 The Japan Society of Applied Physics
PY - 2021/8
Y1 - 2021/8
N2 - The self-assembling of nanovoids with a precisely controlled depth at the GaN/GaAs interface is reported and their formation mechanism discussed. During the very early stages of GaN growth by molecular beam epitaxy over GaAs(100) misoriented substrates, nano-pits are formed by chemical reactions of gallium and nitrogen with a GaAs sacrificial layer. The GaAs sacrificial layer is grown on top of a GaAs/AlGaAs superlattice that is used to efficiently stop the in-depth etch and to promote lateral etching. Thus, a nanostructure of wide voids and pedestals is self-assembled and confined at the interface. As an application, the lift-off of GaN epilayers from the substrate was carried out successfully, a fact that opens up the applicability of this process in other semiconductor systems.
AB - The self-assembling of nanovoids with a precisely controlled depth at the GaN/GaAs interface is reported and their formation mechanism discussed. During the very early stages of GaN growth by molecular beam epitaxy over GaAs(100) misoriented substrates, nano-pits are formed by chemical reactions of gallium and nitrogen with a GaAs sacrificial layer. The GaAs sacrificial layer is grown on top of a GaAs/AlGaAs superlattice that is used to efficiently stop the in-depth etch and to promote lateral etching. Thus, a nanostructure of wide voids and pedestals is self-assembled and confined at the interface. As an application, the lift-off of GaN epilayers from the substrate was carried out successfully, a fact that opens up the applicability of this process in other semiconductor systems.
UR - http://www.scopus.com/inward/record.url?scp=85112092951&partnerID=8YFLogxK
U2 - 10.35848/1882-0786/ac15bd
DO - 10.35848/1882-0786/ac15bd
M3 - Artículo
AN - SCOPUS:85112092951
SN - 1882-0778
VL - 14
JO - Applied Physics Express
JF - Applied Physics Express
IS - 8
M1 - 085507
ER -