TY - JOUR
T1 - Composition mixture probabilistic model in the formation of semiconductor materials obtained by random growth techniques
AU - Iribarren, A.
AU - Menéndez-Proupin, E.
AU - Caballero-Briones, F.
AU - Castro-Rodríguez, R.
AU - Peña, J. L.
PY - 2001/8/20
Y1 - 2001/8/20
N2 - During the obtaining of semiconductor materials by some growth techniques the film structure forms randomly according to how the species arrive to the subtract. If the film is a material with three or more elements they can organize in several compounds, which have only local order and even become amorphous. As a consequence the physico-chemical parameters manifest nontypical behaviors other than in pure materials. In the present work we develop a dynamicalprobabilistic model, which describes quantitatively such composition mixture and was applied on the behavior of the absorption profiles of CdTeO films grown by radio frequency (rf) sputtering with different oxygen concentrations. The model can be applied to films obtained by other growth techniques.
AB - During the obtaining of semiconductor materials by some growth techniques the film structure forms randomly according to how the species arrive to the subtract. If the film is a material with three or more elements they can organize in several compounds, which have only local order and even become amorphous. As a consequence the physico-chemical parameters manifest nontypical behaviors other than in pure materials. In the present work we develop a dynamicalprobabilistic model, which describes quantitatively such composition mixture and was applied on the behavior of the absorption profiles of CdTeO films grown by radio frequency (rf) sputtering with different oxygen concentrations. The model can be applied to films obtained by other growth techniques.
UR - http://www.scopus.com/inward/record.url?scp=0035921493&partnerID=8YFLogxK
U2 - 10.1142/S0217984901002191
DO - 10.1142/S0217984901002191
M3 - Artículo
AN - SCOPUS:0035921493
SN - 0217-9849
VL - 15
SP - 643
EP - 646
JO - Modern Physics Letters B
JF - Modern Physics Letters B
IS - 17-19
ER -