Comparison of different high-linear LNA structures for PCS applications using SiGe HBT and low bias voltage

F. Iturbide-Sánchez; H. Jardón-Aguilar; J. A. Tirado-Méndez

doi:10.1049/el:20020393

Comparison of different high-linear LNA structures for PCS applications using SiGe HBT and low bias voltage

F. Iturbide-Sánchez, H. Jardón-Aguilar, J. A. Tirado-Méndez

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

A discussion on comparisons of different high-linear low noise amplifier (LNA) structures for personal communication systems (PCS) applications using SiGe HBT and low bias voltage was presented. The structures were designed to be used in PCS, operating at 1900 MHz using a SiGe HBT and 2.4 V bias protection. The results showed that after an optimization procedure using the ADS simulation software, noise figure (NF) of the six structures was achieved.

Original language	English
Pages (from-to)	536-538
Number of pages	3
Journal	Electronics Letters
Volume	38
Issue number	12
DOIs	https://doi.org/10.1049/el:20020393
State	Published - 6 Jun 2002
Externally published	Yes

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10.1049/el:20020393

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@article{7684a1b4a7c140f08e143251d5b7c303,

title = "Comparison of different high-linear LNA structures for PCS applications using SiGe HBT and low bias voltage",

abstract = "A discussion on comparisons of different high-linear low noise amplifier (LNA) structures for personal communication systems (PCS) applications using SiGe HBT and low bias voltage was presented. The structures were designed to be used in PCS, operating at 1900 MHz using a SiGe HBT and 2.4 V bias protection. The results showed that after an optimization procedure using the ADS simulation software, noise figure (NF) of the six structures was achieved.",

author = "F. Iturbide-S{\'a}nchez and H. Jard{\'o}n-Aguilar and Tirado-M{\'e}ndez, {J. A.}",

year = "2002",

month = jun,

day = "6",

doi = "10.1049/el:20020393",

language = "Ingl{\'e}s",

volume = "38",

pages = "536--538",

journal = "Electronics Letters",

issn = "0013-5194",

number = "12",

}

TY - JOUR

T1 - Comparison of different high-linear LNA structures for PCS applications using SiGe HBT and low bias voltage

AU - Iturbide-Sánchez, F.

AU - Jardón-Aguilar, H.

AU - Tirado-Méndez, J. A.

PY - 2002/6/6

Y1 - 2002/6/6

N2 - A discussion on comparisons of different high-linear low noise amplifier (LNA) structures for personal communication systems (PCS) applications using SiGe HBT and low bias voltage was presented. The structures were designed to be used in PCS, operating at 1900 MHz using a SiGe HBT and 2.4 V bias protection. The results showed that after an optimization procedure using the ADS simulation software, noise figure (NF) of the six structures was achieved.

AB - A discussion on comparisons of different high-linear low noise amplifier (LNA) structures for personal communication systems (PCS) applications using SiGe HBT and low bias voltage was presented. The structures were designed to be used in PCS, operating at 1900 MHz using a SiGe HBT and 2.4 V bias protection. The results showed that after an optimization procedure using the ADS simulation software, noise figure (NF) of the six structures was achieved.

UR - http://www.scopus.com/inward/record.url?scp=0037030543&partnerID=8YFLogxK

U2 - 10.1049/el:20020393

DO - 10.1049/el:20020393

M3 - Artículo

SN - 0013-5194

VL - 38

SP - 536

EP - 538

JO - Electronics Letters

JF - Electronics Letters

IS - 12

ER -

Comparison of different high-linear LNA structures for PCS applications using SiGe HBT and low bias voltage

Abstract

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