Close space vapor transport of gallium nitride in vacuum

G. Santana-Rodríguez, O. De Melo, J. Aguilar-Hernández, R. Mendoza-Pérez, B. M. Monroy, A. Escamilla-Esquivel, M. López-López, F. De Moure, L. A. Hernández, G. Contreras-Puente

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

GaN synthesized by close space vapor transport in vacuum using GaN powder as the source material is reported. According to X-ray diffraction measurements, samples grown onto sapphire substrates are polycrystalline with the wurzite structure, while those grown onto fused silica substrates are amorphous. Scanning electron microscope and energy dispersive spectroscopy results show that the surface of the samples is composed of rounded droplets of GaN. Room temperature photoluminescence shows near band-edge emission and a broad defect band. Possible mechanisms allowing the deposition of GaN from the vapors of GaN powder are discussed.

Original languageEnglish
Pages (from-to)34-37
Number of pages4
JournalMaterials Letters
Volume96
DOIs
StatePublished - 2013

Keywords

  • Close space vapor transport
  • Gallium nitride
  • Photoluminescence
  • Solar cells

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