TY - JOUR
T1 - Close space vapor transport method for Bi2Te3 thin films deposition
T2 - Influence of the type of substrate
AU - Vigil-Galán, O.
AU - Cruz-Gandarilla, F.
AU - Sastré-Hernández, J.
AU - Roy, F.
AU - Sánchez-Meza, E.
AU - Contreras-Puente, G.
N1 - Funding Information:
This work was partially supported by CONACyT-México and SIP-IPN (Project 2006216) and Conacyt. O. Vigil-Galán and F. Cruz-Gandarilla acknowledge support from COFAA-IPN. F. Roy acknowledges support from the government of Mexico through the Ministry of Foreign Affairs.
PY - 2009/2
Y1 - 2009/2
N2 - Bismuth telluride thin films have been grown by close space vapor transport (CSVT) technique as a function of substrate temperature (Tsub). Both N- and P-type samples can be obtained by this method which is a relatively simple procedure, which makes the method interesting for technological applications. The samples were deposited onto amorphous glass and polycrystalline CdTe film substrates in the substrate temperature range 300-425 °C, with a fixed gradient between source and substrate of 300 °C. The influence of the type of substrate and substrate temperature in the CSVT chamber on the physical properties of the films is presented and discussed.
AB - Bismuth telluride thin films have been grown by close space vapor transport (CSVT) technique as a function of substrate temperature (Tsub). Both N- and P-type samples can be obtained by this method which is a relatively simple procedure, which makes the method interesting for technological applications. The samples were deposited onto amorphous glass and polycrystalline CdTe film substrates in the substrate temperature range 300-425 °C, with a fixed gradient between source and substrate of 300 °C. The influence of the type of substrate and substrate temperature in the CSVT chamber on the physical properties of the films is presented and discussed.
KW - A. Thin films
KW - D. Electrical properties
UR - http://www.scopus.com/inward/record.url?scp=59049104818&partnerID=8YFLogxK
U2 - 10.1016/j.jpcs.2008.11.008
DO - 10.1016/j.jpcs.2008.11.008
M3 - Artículo
SN - 0022-3697
VL - 70
SP - 365
EP - 370
JO - Journal of Physics and Chemistry of Solids
JF - Journal of Physics and Chemistry of Solids
IS - 2
ER -