Chemically-deposited Te layers improving the parameters of back contacts for CdTe solar cells

R. Ochoa-Landín; O. Vigil-Galan; Y. V. Vorobiev; R. Ramírez-Bon

doi:10.1016/j.solener.2008.07.005

Chemically-deposited Te layers improving the parameters of back contacts for CdTe solar cells

R. Ochoa-Landín, O. Vigil-Galan, Y. V. Vorobiev, R. Ramírez-Bon

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

A chemical bath process was carried out for the deposition of Te layers on CdTe films grown by the close-space vapor transport technique (CSVT) on conducting SnO₂:F substrates. The Te layers were chemically-deposited on as-grown CdTe films and on previously CdCl₂-treated CdTe ones. After Te deposition, the CdTe films were annealed at temperatures from 200 to 400 °C. The Te layer on top of the CdTe films was studied by Raman Spectroscopy and by Scanning Electron Microscopy. The electrical resistivity of the annealed CdTe films was determined from current versus voltage measurements in a sandwich configuration, employing gold contacts on top of the CdTe modified surface. The results show that the combined effect of the Te layer on CdTe together with previous CdCl₂ treatment improves the electrical properties of CSVT-CdTe films. These results are quite promising for increasing performance of CdS/CdTe solar cells.

Original language	English
Pages (from-to)	134-138
Number of pages	5
Journal	Solar Energy
Volume	83
Issue number	1
DOIs	https://doi.org/10.1016/j.solener.2008.07.005
State	Published - Jan 2009
Externally published	Yes

Keywords

Annealing
CdTe
Chemical deposition
Electrical properties

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10.1016/j.solener.2008.07.005

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title = "Chemically-deposited Te layers improving the parameters of back contacts for CdTe solar cells",

abstract = "A chemical bath process was carried out for the deposition of Te layers on CdTe films grown by the close-space vapor transport technique (CSVT) on conducting SnO2:F substrates. The Te layers were chemically-deposited on as-grown CdTe films and on previously CdCl2-treated CdTe ones. After Te deposition, the CdTe films were annealed at temperatures from 200 to 400 °C. The Te layer on top of the CdTe films was studied by Raman Spectroscopy and by Scanning Electron Microscopy. The electrical resistivity of the annealed CdTe films was determined from current versus voltage measurements in a sandwich configuration, employing gold contacts on top of the CdTe modified surface. The results show that the combined effect of the Te layer on CdTe together with previous CdCl2 treatment improves the electrical properties of CSVT-CdTe films. These results are quite promising for increasing performance of CdS/CdTe solar cells.",

keywords = "Annealing, CdTe, Chemical deposition, Electrical properties",

author = "R. Ochoa-Land{\'i}n and O. Vigil-Galan and Vorobiev, {Y. V.} and R. Ram{\'i}rez-Bon",

year = "2009",

month = jan,

doi = "10.1016/j.solener.2008.07.005",

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journal = "Solar Energy",

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TY - JOUR

T1 - Chemically-deposited Te layers improving the parameters of back contacts for CdTe solar cells

AU - Ochoa-Landín, R.

AU - Vigil-Galan, O.

AU - Vorobiev, Y. V.

AU - Ramírez-Bon, R.

PY - 2009/1

Y1 - 2009/1

N2 - A chemical bath process was carried out for the deposition of Te layers on CdTe films grown by the close-space vapor transport technique (CSVT) on conducting SnO2:F substrates. The Te layers were chemically-deposited on as-grown CdTe films and on previously CdCl2-treated CdTe ones. After Te deposition, the CdTe films were annealed at temperatures from 200 to 400 °C. The Te layer on top of the CdTe films was studied by Raman Spectroscopy and by Scanning Electron Microscopy. The electrical resistivity of the annealed CdTe films was determined from current versus voltage measurements in a sandwich configuration, employing gold contacts on top of the CdTe modified surface. The results show that the combined effect of the Te layer on CdTe together with previous CdCl2 treatment improves the electrical properties of CSVT-CdTe films. These results are quite promising for increasing performance of CdS/CdTe solar cells.

AB - A chemical bath process was carried out for the deposition of Te layers on CdTe films grown by the close-space vapor transport technique (CSVT) on conducting SnO2:F substrates. The Te layers were chemically-deposited on as-grown CdTe films and on previously CdCl2-treated CdTe ones. After Te deposition, the CdTe films were annealed at temperatures from 200 to 400 °C. The Te layer on top of the CdTe films was studied by Raman Spectroscopy and by Scanning Electron Microscopy. The electrical resistivity of the annealed CdTe films was determined from current versus voltage measurements in a sandwich configuration, employing gold contacts on top of the CdTe modified surface. The results show that the combined effect of the Te layer on CdTe together with previous CdCl2 treatment improves the electrical properties of CSVT-CdTe films. These results are quite promising for increasing performance of CdS/CdTe solar cells.

KW - Annealing

KW - CdTe

KW - Chemical deposition

KW - Electrical properties

UR - http://www.scopus.com/inward/record.url?scp=56949084620&partnerID=8YFLogxK

U2 - 10.1016/j.solener.2008.07.005

DO - 10.1016/j.solener.2008.07.005

M3 - Artículo

SN - 0038-092X

VL - 83

SP - 134

EP - 138

JO - Solar Energy

JF - Solar Energy

IS - 1

ER -

Chemically-deposited Te layers improving the parameters of back contacts for CdTe solar cells

Abstract

Keywords

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