Characterization of LPE-Ga0.86In0.14As0.13Sb0.87

J. Díaz-Reyes; J. S. Arias-Cerón; J. G. Mendoza-Álvarez; J. L. Herrera-Pérez

doi:10.1557/adv.2017.523

Characterization of LPE-Ga_0.86In_0.14As_0.13Sb_0.87

J. Díaz-Reyes, J. S. Arias-Cerón, J. G. Mendoza-Álvarez, J. L. Herrera-Pérez

Research output: Contribution to journal › Article › peer-review

Abstract

Using the liquid phase epitaxy technique (LPE) Ga0.86In0.14As0.13Sb0.87 layers lattice-matched to (100) Te-GaSb have been deposited, which were intentionally doped with Te and Zn in a wide range. The Raman spectra show that the layers become more defective as the dopant molar fraction is increased. Two main vibrational bands are observed in the Raman spectra centred at 230 and 245 cm^-1 that depend strongly on the Te (Zn) molar concentration, which are assigned to the vibrational modes GaAs-like and to (GaSb+InAs)-like mixture. The low-temperature photoluminescence of n (p)-type GaInAsSb was obtained as a function of Te (Zn) concentration added to the melt solution. The photoluminescence was interpreted taking into account nonparabolicity of the conduction (valence) band. It is shown that the band-to-band radiative transition energy can be used to estimate the free carrier concentration in GaInAsSb, for a wide range of doping concentration.

Original language	English
Pages (from-to)	2883-2890
Number of pages	8
Journal	MRS Advances
Volume	2
Issue number	50
DOIs	https://doi.org/10.1557/adv.2017.523
State	Published - 2017

Keywords

Dopant
Liquid phase epitaxy technique (LPE)
Raman spectroscopy

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title = "Characterization of LPE-Ga0.86In0.14As0.13Sb0.87",

abstract = "Using the liquid phase epitaxy technique (LPE) Ga0.86In0.14As0.13Sb0.87 layers lattice-matched to (100) Te-GaSb have been deposited, which were intentionally doped with Te and Zn in a wide range. The Raman spectra show that the layers become more defective as the dopant molar fraction is increased. Two main vibrational bands are observed in the Raman spectra centred at 230 and 245 cm-1 that depend strongly on the Te (Zn) molar concentration, which are assigned to the vibrational modes GaAs-like and to (GaSb+InAs)-like mixture. The low-temperature photoluminescence of n (p)-type GaInAsSb was obtained as a function of Te (Zn) concentration added to the melt solution. The photoluminescence was interpreted taking into account nonparabolicity of the conduction (valence) band. It is shown that the band-to-band radiative transition energy can be used to estimate the free carrier concentration in GaInAsSb, for a wide range of doping concentration.",

keywords = "Dopant, Liquid phase epitaxy technique (LPE), Raman spectroscopy",

author = "J. D{\'i}az-Reyes and Arias-Cer{\'o}n, {J. S.} and Mendoza-{\'A}lvarez, {J. G.} and Herrera-P{\'e}rez, {J. L.}",

note = "Publisher Copyright: {\textcopyright} 2017 Materials Research Society.",

year = "2017",

doi = "10.1557/adv.2017.523",

language = "Ingl{\'e}s",

volume = "2",

pages = "2883--2890",

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T1 - Characterization of LPE-Ga0.86In0.14As0.13Sb0.87

AU - Díaz-Reyes, J.

AU - Arias-Cerón, J. S.

AU - Mendoza-Álvarez, J. G.

AU - Herrera-Pérez, J. L.

PY - 2017

Y1 - 2017

N2 - Using the liquid phase epitaxy technique (LPE) Ga0.86In0.14As0.13Sb0.87 layers lattice-matched to (100) Te-GaSb have been deposited, which were intentionally doped with Te and Zn in a wide range. The Raman spectra show that the layers become more defective as the dopant molar fraction is increased. Two main vibrational bands are observed in the Raman spectra centred at 230 and 245 cm-1 that depend strongly on the Te (Zn) molar concentration, which are assigned to the vibrational modes GaAs-like and to (GaSb+InAs)-like mixture. The low-temperature photoluminescence of n (p)-type GaInAsSb was obtained as a function of Te (Zn) concentration added to the melt solution. The photoluminescence was interpreted taking into account nonparabolicity of the conduction (valence) band. It is shown that the band-to-band radiative transition energy can be used to estimate the free carrier concentration in GaInAsSb, for a wide range of doping concentration.

AB - Using the liquid phase epitaxy technique (LPE) Ga0.86In0.14As0.13Sb0.87 layers lattice-matched to (100) Te-GaSb have been deposited, which were intentionally doped with Te and Zn in a wide range. The Raman spectra show that the layers become more defective as the dopant molar fraction is increased. Two main vibrational bands are observed in the Raman spectra centred at 230 and 245 cm-1 that depend strongly on the Te (Zn) molar concentration, which are assigned to the vibrational modes GaAs-like and to (GaSb+InAs)-like mixture. The low-temperature photoluminescence of n (p)-type GaInAsSb was obtained as a function of Te (Zn) concentration added to the melt solution. The photoluminescence was interpreted taking into account nonparabolicity of the conduction (valence) band. It is shown that the band-to-band radiative transition energy can be used to estimate the free carrier concentration in GaInAsSb, for a wide range of doping concentration.

KW - Dopant

KW - Liquid phase epitaxy technique (LPE)

KW - Raman spectroscopy

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DO - 10.1557/adv.2017.523

M3 - Artículo

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JO - MRS Advances

JF - MRS Advances

IS - 50

ER -

Characterization of LPE-Ga_0.86In_0.14As_0.13Sb_0.87

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Keywords

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