CdTe thin films grown by pulsed laser deposition using powder as target: Effect of substrate temperature

F. De Moure-Flores, J. G. Quiñones-Galván, A. Guillén-Cervantes, J. S. Arias-Cerón, A. Hernández-Hernández, J. Santoyo-Salazar, J. Santos-Cruz, S. A. Mayén-Hernández, M. De La, J. G. Mendoza-Álvarez, M. Meléndez-Lira, G. Contreras-Puente

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Abstract

CdTe thin films were deposited by pulsed laser deposition on Corning glass slides using CdTe powder as target. Films were grown at substrate temperatures ranging from room temperature (~25 C) to 300 C. The structural, compositional and optical properties were analyzed as a function of substrate temperature. X-ray diffraction shows that CdTe films grown at room temperature have hexagonal phase, while for higher temperatures the films have cubic phase. Raman and EDS indicate that films grew with Te excess, which suggests that CdTe films have p-type conductivity.

Translated title of the contributionPelículas delgadas de CdTe cultivadas por deposición láser pulsada utilizando polvo como objetivo: efecto de la temperatura del sustrato
Original languageEnglish
Pages (from-to)27-31
Number of pages5
JournalJournal of Crystal Growth
Volume386
DOIs
StatePublished - 2014

Keywords

  • A3. Pulsed laser deposition
  • B2. Semiconducting II-VI materials
  • B3. Solar cells

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