CdTe oxide films grown by radio frequency sputtering utilizing argon-nitrous oxide plasma

Cadmium telluride oxide films (CdTe:0) were grown by a radio frequency sputtering technique using a controlled plasma (Ar-N₂0) on glass slide substrates. The films were studied by Auger electron spectroscopy, x-ray photoelectron spectroscopy, and x-ray diffraction. We demonstrate that with N₂0 the oxidation process occurs in a narrow range of partial pressures of nitrous oxide. We find that the films are amorphous and the amount of oxygen incorporated in the films depends on the N₂0 partial pressure and saturates at about 55 at. % oxygen. As the amount of oxygen increases the number of Te-0 and Cd-0 bonds increases. The compounds formed depend on the partial pressure of the N₂0 and are of the form CdxTeyOz. When saturation of oxygen is obtained the compound formed is probably CdTe₂0₅.