CdS/ZnS Bilayer Thin Films Used As Buffer Layer in 10%-Efficient Cu2ZnSnSe4Solar Cells

V. Hernández-Calderón; O. Vigil-Galán; M. Guc; A. Carrillo-Osuna; S. Ramírez-Velasco; F. J. Sánchez-Rodríguez; P. Vidal-Fuentes; S. Giraldo; E. Saucedo; Y. Sánchez

doi:10.1021/acsaem.0c00937

CdS/ZnS Bilayer Thin Films Used As Buffer Layer in 10%-Efficient Cu₂ZnSnSe₄Solar Cells

V. Hernández-Calderón, O. Vigil-Galán, M. Guc, A. Carrillo-Osuna, S. Ramírez-Velasco, F. J. Sánchez-Rodríguez, P. Vidal-Fuentes, S. Giraldo, E. Saucedo, Y. Sánchez

Escuela Superior de Física y Matemáticas (ESFM)

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

This work deals with the soda-lime glass/Mo/Cu2ZnSnSe4/CdS/ZnS/i-ZnO/ITO solar cells. CdS/ZnS bilayers were synthesized by chemical bath deposition (CBD) method as buffer layers for Cu2ZnSnSe4 (CZTSe) solar cells. The depositions were carried out by varying the deposition time of the CdS film, while keeping the deposition time of the ZnS film constant. The devices went from 7.2% efficiency in a reference device using CdS to 10% in a device including a thin film of ZnS. All devices were processed without any additional annealing treatment on CdS/ZnS layers. J-V, EQE, SEM, Raman, and C-V characterizations were performed to investigate the properties of the solar cells as a function of the thickness of the CdS layer and to shed light on the origin of influence of the ZnS layer to the device performance. Moreover, the influence of physical properties of the buffer bilayers on the electrical parameters of the solar cells are discussed by means of numerical simulation.

Translated title of the contribution	Películas delgadas bicapa de CdS/ZnS utilizadas como capa amortiguadora en células solares Cu 2 ZnSnSe 4 con una eficiencia del 10 %
Original language	English
Pages (from-to)	6815-6823
Number of pages	9
Journal	ACS Applied Energy Materials
Volume	3
Issue number	7
DOIs	https://doi.org/10.1021/acsaem.0c00937
State	Published - 27 Jul 2020

Keywords

CBD chemical process
CdS/ZnS bilayers buffer layer
chalcogenides
kesterite; CZTSe thin-film solar cells

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10.1021/acsaem.0c00937

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title = "CdS/ZnS Bilayer Thin Films Used As Buffer Layer in 10%-Efficient Cu2ZnSnSe4Solar Cells",

abstract = "This work deals with the soda-lime glass/Mo/Cu2ZnSnSe4/CdS/ZnS/i-ZnO/ITO solar cells. CdS/ZnS bilayers were synthesized by chemical bath deposition (CBD) method as buffer layers for Cu2ZnSnSe4 (CZTSe) solar cells. The depositions were carried out by varying the deposition time of the CdS film, while keeping the deposition time of the ZnS film constant. The devices went from 7.2% efficiency in a reference device using CdS to 10% in a device including a thin film of ZnS. All devices were processed without any additional annealing treatment on CdS/ZnS layers. J-V, EQE, SEM, Raman, and C-V characterizations were performed to investigate the properties of the solar cells as a function of the thickness of the CdS layer and to shed light on the origin of influence of the ZnS layer to the device performance. Moreover, the influence of physical properties of the buffer bilayers on the electrical parameters of the solar cells are discussed by means of numerical simulation.",

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author = "V. Hern{\'a}ndez-Calder{\'o}n and O. Vigil-Gal{\'a}n and M. Guc and A. Carrillo-Osuna and S. Ram{\'i}rez-Velasco and S{\'a}nchez-Rodr{\'i}guez, {F. J.} and P. Vidal-Fuentes and S. Giraldo and E. Saucedo and Y. S{\'a}nchez",

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T1 - CdS/ZnS Bilayer Thin Films Used As Buffer Layer in 10%-Efficient Cu2ZnSnSe4Solar Cells

AU - Hernández-Calderón, V.

AU - Vigil-Galán, O.

AU - Guc, M.

AU - Carrillo-Osuna, A.

AU - Ramírez-Velasco, S.

AU - Sánchez-Rodríguez, F. J.

AU - Vidal-Fuentes, P.

AU - Giraldo, S.

AU - Saucedo, E.

AU - Sánchez, Y.

PY - 2020/7/27

Y1 - 2020/7/27

N2 - This work deals with the soda-lime glass/Mo/Cu2ZnSnSe4/CdS/ZnS/i-ZnO/ITO solar cells. CdS/ZnS bilayers were synthesized by chemical bath deposition (CBD) method as buffer layers for Cu2ZnSnSe4 (CZTSe) solar cells. The depositions were carried out by varying the deposition time of the CdS film, while keeping the deposition time of the ZnS film constant. The devices went from 7.2% efficiency in a reference device using CdS to 10% in a device including a thin film of ZnS. All devices were processed without any additional annealing treatment on CdS/ZnS layers. J-V, EQE, SEM, Raman, and C-V characterizations were performed to investigate the properties of the solar cells as a function of the thickness of the CdS layer and to shed light on the origin of influence of the ZnS layer to the device performance. Moreover, the influence of physical properties of the buffer bilayers on the electrical parameters of the solar cells are discussed by means of numerical simulation.

AB - This work deals with the soda-lime glass/Mo/Cu2ZnSnSe4/CdS/ZnS/i-ZnO/ITO solar cells. CdS/ZnS bilayers were synthesized by chemical bath deposition (CBD) method as buffer layers for Cu2ZnSnSe4 (CZTSe) solar cells. The depositions were carried out by varying the deposition time of the CdS film, while keeping the deposition time of the ZnS film constant. The devices went from 7.2% efficiency in a reference device using CdS to 10% in a device including a thin film of ZnS. All devices were processed without any additional annealing treatment on CdS/ZnS layers. J-V, EQE, SEM, Raman, and C-V characterizations were performed to investigate the properties of the solar cells as a function of the thickness of the CdS layer and to shed light on the origin of influence of the ZnS layer to the device performance. Moreover, the influence of physical properties of the buffer bilayers on the electrical parameters of the solar cells are discussed by means of numerical simulation.

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KW - CdS/ZnS bilayers buffer layer

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KW - kesterite; CZTSe thin-film solar cells

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CdS/ZnS Bilayer Thin Films Used As Buffer Layer in 10%-Efficient Cu₂ZnSnSe₄Solar Cells

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