Abstract
Cadmium sulphide polycrystalline thin films were prepared by chemical-bath deposition (CBD) method onto glass substrates at 80°C. The modification to the traditional technique consists in applying a pulsed electric (E) external fields during the growth process. E was applied in two different orientations with respect to substrate plane surface (SPS): (a) parallel and (b) perpendicular. The as-deposited samples are hard and look yellowish with a shine and smooth surface. In both cases, X-ray diffractograms show slight differences in the crystalline structure, but optical reflection measurements reveal strong anisotropic characteristics, specially in case (b). Atomic force microscopy pictures evidence a large amount of valleys among crystalline grains. This is a resultant effect of the field action.
Original language | English |
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Pages (from-to) | 380-386 |
Number of pages | 7 |
Journal | Journal of Crystal Growth |
Volume | 187 |
Issue number | 3-4 |
DOIs | |
State | Published - 15 May 1998 |
Externally published | Yes |
Keywords
- Anisotropy
- Chemical synthesis
- Semiconductors
- Thin films