TY - JOUR
T1 - CdS-based p-i-n diodes using indium and copper doped CdS films by pulsed laser deposition
AU - Hernandez-Como, N.
AU - Berrellez-Reyes, F.
AU - Mizquez-Corona, R.
AU - Ramirez-Esquivel, O.
AU - Mejia, I.
AU - Quevedo-Lopez, M.
N1 - Publisher Copyright:
© 2015 IOP Publishing Ltd.
PY - 2015/6/1
Y1 - 2015/6/1
N2 - In this work we report a method to dope cadmium sulfide (CdS) thin films using pulsed laser deposition. Doping is achieved during film growth at substrate temperatures of 100 °C by sequential deposition of the CdS and the dopant material. Indium sulfide and copper disulfide targets were used as the dopant sources for n-type and p-type doping, respectively. Film resistivities as low as 0.2 and 1 Ω cm were achieved for indium and copper doped films, respectively. Hall effect measurements demonstrated the change in conductivity type from n-type to p-type when the copper dopants are incorporated into the film. The controlled incorporation of indium or copper, in the undoped CdS film, results in substitutional defects in the CdS, which increases the electron and hole concentration up to 4 × 1018 cm-3 and 3 × 1020 cm-3, respectively. The results observed with CdS doping can be expanded to other chalcogenides material compounds by just selecting different targets. With the optimized doped films, CdS-based p-i-n diodes were fabricated yielding an ideality factor of 4, a saturation current density of 2 × 10-6 A cm-2 and a rectification ratio of three orders of magnitude at ±3 V.
AB - In this work we report a method to dope cadmium sulfide (CdS) thin films using pulsed laser deposition. Doping is achieved during film growth at substrate temperatures of 100 °C by sequential deposition of the CdS and the dopant material. Indium sulfide and copper disulfide targets were used as the dopant sources for n-type and p-type doping, respectively. Film resistivities as low as 0.2 and 1 Ω cm were achieved for indium and copper doped films, respectively. Hall effect measurements demonstrated the change in conductivity type from n-type to p-type when the copper dopants are incorporated into the film. The controlled incorporation of indium or copper, in the undoped CdS film, results in substitutional defects in the CdS, which increases the electron and hole concentration up to 4 × 1018 cm-3 and 3 × 1020 cm-3, respectively. The results observed with CdS doping can be expanded to other chalcogenides material compounds by just selecting different targets. With the optimized doped films, CdS-based p-i-n diodes were fabricated yielding an ideality factor of 4, a saturation current density of 2 × 10-6 A cm-2 and a rectification ratio of three orders of magnitude at ±3 V.
KW - cadmium sulfide
KW - doping
KW - p-i-n diode
KW - pulsed laser deposition
UR - http://www.scopus.com/inward/record.url?scp=84930226144&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/30/6/065003
DO - 10.1088/0268-1242/30/6/065003
M3 - Artículo
SN - 0268-1242
VL - 30
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
IS - 6
M1 - 065003
ER -