TY - JOUR
T1 - Cancellation of sub-harmonic and second harmonic components to improve the linearity of a low-power consumption LNA using SiGe HBT
AU - Iturbide-Sanchez, Flavio
AU - Jardon-Aguilar, Hildeberto
AU - Tirado-Mendez, Jose Alfredo
PY - 2003/5/20
Y1 - 2003/5/20
N2 - Three simple methods to improve the third-order intercept point (IP3) of a low-noise amplifier (LNA) for personal communication systems (PCS) applications or CDMA cellular handsets are introduced. Both simulations and results from previous works in the literature are compared in order to demonstrate the effectiveness of these methods in improving the performance of the LNA in terms of linearity when low-bias voltage is used. The LNA was designed to operate at 1.9 GHz, using a silicon germanium (SiGe) heterojunction bipolar transistor (HBT) and 2.4 V bias voltage.
AB - Three simple methods to improve the third-order intercept point (IP3) of a low-noise amplifier (LNA) for personal communication systems (PCS) applications or CDMA cellular handsets are introduced. Both simulations and results from previous works in the literature are compared in order to demonstrate the effectiveness of these methods in improving the performance of the LNA in terms of linearity when low-bias voltage is used. The LNA was designed to operate at 1.9 GHz, using a silicon germanium (SiGe) heterojunction bipolar transistor (HBT) and 2.4 V bias voltage.
KW - High linearity
KW - LNA
KW - SiGe HBT
UR - http://www.scopus.com/inward/record.url?scp=0038415880&partnerID=8YFLogxK
U2 - 10.1002/mop.10903
DO - 10.1002/mop.10903
M3 - Artículo
SN - 0895-2477
VL - 37
SP - 308
EP - 311
JO - Microwave and Optical Technology Letters
JF - Microwave and Optical Technology Letters
IS - 4
ER -