TY - JOUR
T1 - Calculation of electronic properties in AlxGa1-x delta-doped systems
AU - Gaggero-Sager, L. M.
AU - Mora-Ramos, M. E.
AU - Olivares-Robles, M. A.
N1 - Funding Information:
The authors acknowledge support from CONACYT through grant 48070. MEMR acknowledges support from UAEM through PIFI 3.0.
PY - 2005/3
Y1 - 2005/3
N2 - The calculation of the electronic energy levels of n-type δ-doped quantum wells in a AlGaAs matrix is presented. Many-body effects in the two-dimensional electron gas are taken into account by using a local-density Thomas-Fermi approach. Special consideration is taken into when the values of the Al molar fraction x≥0.45, and the ternary alloy becomes an indirect gap material. The results suggest that in this case the AlxGa 1-xAs can support two-dimensional conduction channels associated to the delta-doping, with carrier densities exceeding 1013 cm -2.
AB - The calculation of the electronic energy levels of n-type δ-doped quantum wells in a AlGaAs matrix is presented. Many-body effects in the two-dimensional electron gas are taken into account by using a local-density Thomas-Fermi approach. Special consideration is taken into when the values of the Al molar fraction x≥0.45, and the ternary alloy becomes an indirect gap material. The results suggest that in this case the AlxGa 1-xAs can support two-dimensional conduction channels associated to the delta-doping, with carrier densities exceeding 1013 cm -2.
KW - AlGaAs
KW - Delta-doping
KW - Electronic properties
UR - http://www.scopus.com/inward/record.url?scp=33644534824&partnerID=8YFLogxK
U2 - 10.1016/j.mejo.2005.02.035
DO - 10.1016/j.mejo.2005.02.035
M3 - Artículo de la conferencia
AN - SCOPUS:33644534824
SN - 0026-2692
VL - 36
SP - 416
EP - 418
JO - Microelectronics Journal
JF - Microelectronics Journal
IS - 3-6
ER -