TY - JOUR
T1 - C-V calculations in CdS/CdTe thin films solar cells with a CdSxTe1-x interlayer
AU - Gonzalez-Cisneros, A.
AU - Castillo-Alvarado, F. L.
AU - Ortiz-Lopez, J.
AU - Contreras-Puente, G.
PY - 2013
Y1 - 2013
N2 - In CdS/CdTe solar cells, chemical interdiffusion at the interface gives rise to the formation of an interlayer of the ternary compound CdSxCdTe1-x. In this work, we evaluate the effects of this interlayer in CdS/CdTe photovoltaic cells in order to improve theoretical results describing experimental C-V (capacitance versus voltage) characteristics. We extended our previous theoretical methodology developed on the basis of three cardinal equations (Castillo-Alvarado et al., 2010). The present results provide a better fit to experimental data obtained from CdS/CdTe solar cells grown in our laboratory by the chemical bath deposition (for CdS film) and the close-spaced vapor transport (for CdTe film) techniques.
AB - In CdS/CdTe solar cells, chemical interdiffusion at the interface gives rise to the formation of an interlayer of the ternary compound CdSxCdTe1-x. In this work, we evaluate the effects of this interlayer in CdS/CdTe photovoltaic cells in order to improve theoretical results describing experimental C-V (capacitance versus voltage) characteristics. We extended our previous theoretical methodology developed on the basis of three cardinal equations (Castillo-Alvarado et al., 2010). The present results provide a better fit to experimental data obtained from CdS/CdTe solar cells grown in our laboratory by the chemical bath deposition (for CdS film) and the close-spaced vapor transport (for CdTe film) techniques.
UR - http://www.scopus.com/inward/record.url?scp=84885407290&partnerID=8YFLogxK
U2 - 10.1155/2013/513217
DO - 10.1155/2013/513217
M3 - Artículo
SN - 1110-662X
VL - 2013
JO - International Journal of Photoenergy
JF - International Journal of Photoenergy
M1 - 513217
ER -