Ballistic effect and photoluminescence excitation in porous silicon

T. V. Torchynska; M. Morales Rodriguez; L. Yu Khomenkova

doi:10.1016/S0039-6028(03)00483-7

Ballistic effect and photoluminescence excitation in porous silicon

T. V. Torchynska, M. Morales Rodriguez, L. Yu Khomenkova

Escuela Superior de Física y Matemáticas (ESFM)

Research output: Contribution to journal › Conference article › peer-review

4 Scopus citations

Abstract

This article presents experimental results supporting the role of the ballistic transport in strong "red" photoluminescence (PL) of porous silicon (PSi). It is shown that this PL band connects with emission of oxide-related defects at the Si/SiO_x interface. The dependence of an intensity of interface-defect related photoluminescence on morphology and the average size of Si nano-crystallites on porous silicon surface has been investigated. The peculiarities of Raman and PL excitation spectra in dependence on the average size of Si nano-crystallites have been studied as well. Confirmation of ballistic effect role is important for understanding the photoluminescence mechanism in Si nano-crystallites and successful application of silicon low-dimensional structures in optoelectronics.

Translated title of the contribution	Efecto balístico y excitación fotoluminiscente en silicio poroso
Original language	English
Pages (from-to)	1204-1208
Number of pages	5
Journal	Surface Science
Volume	532-535
DOIs	https://doi.org/10.1016/S0039-6028(03)00483-7
State	Published - 10 Jun 2003
Event	Proceedings of the 7th International Conference on Nanometer - Malmo, Sweden Duration: 29 Aug 2002 → 31 Aug 2002

Keywords

Photoluminescence
Porous solids
Silicon
Surface defects

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10.1016/S0039-6028(03)00483-7

Cite this

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title = "Ballistic effect and photoluminescence excitation in porous silicon",

abstract = "This article presents experimental results supporting the role of the ballistic transport in strong {"}red{"} photoluminescence (PL) of porous silicon (PSi). It is shown that this PL band connects with emission of oxide-related defects at the Si/SiOx interface. The dependence of an intensity of interface-defect related photoluminescence on morphology and the average size of Si nano-crystallites on porous silicon surface has been investigated. The peculiarities of Raman and PL excitation spectra in dependence on the average size of Si nano-crystallites have been studied as well. Confirmation of ballistic effect role is important for understanding the photoluminescence mechanism in Si nano-crystallites and successful application of silicon low-dimensional structures in optoelectronics.",

keywords = "Photoluminescence, Porous solids, Silicon, Surface defects",

author = "Torchynska, {T. V.} and {Morales Rodriguez}, M. and Khomenkova, {L. Yu}",

note = "Funding Information: This work was supported by CONACYT (Project 33427-U and International cooperation project Mexico-Ukraine), as well as CGPI IPN Mexico and Ministry of Sciences and Education of Ukraine.; Proceedings of the 7th International Conference on Nanometer ; Conference date: 29-08-2002 Through 31-08-2002",

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doi = "10.1016/S0039-6028(03)00483-7",

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volume = "532-535",

pages = "1204--1208",

journal = "Surface Science",

issn = "0039-6028",

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TY - JOUR

T1 - Ballistic effect and photoluminescence excitation in porous silicon

AU - Torchynska, T. V.

AU - Morales Rodriguez, M.

AU - Khomenkova, L. Yu

N1 - Funding Information: This work was supported by CONACYT (Project 33427-U and International cooperation project Mexico-Ukraine), as well as CGPI IPN Mexico and Ministry of Sciences and Education of Ukraine.

PY - 2003/6/10

Y1 - 2003/6/10

N2 - This article presents experimental results supporting the role of the ballistic transport in strong "red" photoluminescence (PL) of porous silicon (PSi). It is shown that this PL band connects with emission of oxide-related defects at the Si/SiOx interface. The dependence of an intensity of interface-defect related photoluminescence on morphology and the average size of Si nano-crystallites on porous silicon surface has been investigated. The peculiarities of Raman and PL excitation spectra in dependence on the average size of Si nano-crystallites have been studied as well. Confirmation of ballistic effect role is important for understanding the photoluminescence mechanism in Si nano-crystallites and successful application of silicon low-dimensional structures in optoelectronics.

AB - This article presents experimental results supporting the role of the ballistic transport in strong "red" photoluminescence (PL) of porous silicon (PSi). It is shown that this PL band connects with emission of oxide-related defects at the Si/SiOx interface. The dependence of an intensity of interface-defect related photoluminescence on morphology and the average size of Si nano-crystallites on porous silicon surface has been investigated. The peculiarities of Raman and PL excitation spectra in dependence on the average size of Si nano-crystallites have been studied as well. Confirmation of ballistic effect role is important for understanding the photoluminescence mechanism in Si nano-crystallites and successful application of silicon low-dimensional structures in optoelectronics.

KW - Photoluminescence

KW - Porous solids

KW - Silicon

KW - Surface defects

UR - http://www.scopus.com/inward/record.url?scp=0037845221&partnerID=8YFLogxK

U2 - 10.1016/S0039-6028(03)00483-7

DO - 10.1016/S0039-6028(03)00483-7

M3 - Artículo de la conferencia

AN - SCOPUS:0037845221

SN - 0039-6028

VL - 532-535

SP - 1204

EP - 1208

JO - Surface Science

JF - Surface Science

T2 - Proceedings of the 7th International Conference on Nanometer

Y2 - 29 August 2002 through 31 August 2002

ER -

Ballistic effect and photoluminescence excitation in porous silicon

Abstract

Keywords

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