Abstract
The purpose of this work is to clarify the type of corresponding radiative transitions and the PL mechanism in the big silicon nano-crystallites with the size from the range of 10-150 nm, which is higher than an exciton Bohr radius (≤ 5 nm) in corresponding bulk crystal. Photoluminescence in this type of Si nanocrystals is analyzed from the point of view of new concept based on the hot carrier ballistic transport role in the excitation of oxide-related defects at the Si/SiOx interface. The role of hot carrier ballistic transport in the modification of photocurrent spectra of Si NC device structures is discussed as well.
| Translated title of the contribution | Efecto balístico y propiedades ópticas de estructuras de nanocristalitos de Si |
|---|---|
| Original language | English |
| Pages (from-to) | 375-378 |
| Number of pages | 4 |
| Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Volume | 4 |
| Issue number | 2 |
| DOIs | |
| State | Published - 2007 |
| Event | International Conference on Superlattices, Nano-structures and Nano-devices, ICSNN-2006 - Istanbul, Turkey Duration: 30 Jul 2006 → 4 Aug 2006 |