Abstract
Au doped CdS polycrystalline films were grown on Corning glass substrates at room temperature by co-sputtering from a CdS-Cd-Au target. Elemental Cd and Au were placed onto the CdS target covering small areas. The electrical, structural, and optical properties were analyzed as a function of Au content. The Au doped CdS polycrystalline films showed a p-type semiconductor nature. It was found that the electrical resistivity drops and the carrier concentration increases as a consequence of Au incorporation within the CdS lattice. In both cases, the changes were of several orders of magnitude.
Original language | English |
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Pages (from-to) | 214-217 |
Number of pages | 4 |
Journal | Superficies y Vacio |
Volume | 25 |
Issue number | 4 |
State | Published - Dec 2012 |
Externally published | Yes |
Keywords
- CdS
- Sputtering
- Thin films
- X-Ray