Au doped CdS polycrystalline films were grown on Corning glass substrates at room temperature by co-sputtering from a CdS-Cd-Au target. Elemental Cd and Au were placed onto the CdS target covering small areas. The electrical, structural, and optical properties were analyzed as a function of Au content. The Au doped CdS polycrystalline films showed a p-type semiconductor nature. It was found that the electrical resistivity drops and the carrier concentration increases as a consequence of Au incorporation within the CdS lattice. In both cases, the changes were of several orders of magnitude. © Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales.
|Original language||American English|
|Number of pages||192|
|Journal||Superficies y Vacio|
|State||Published - 1 Dec 2012|