TY - JOUR
T1 - Approximations to defect chemistry in Bi4Ti3O12
AU - Martínez-Morales, Ma Del Carmen
AU - Romero-Serrano, José Antonio
AU - Gómez-Yáñez, Carlos
AU - Rojas, Luis Lartundo
N1 - Publisher Copyright:
© 2016 World Scientific Publishing Company.
PY - 2016/12/1
Y1 - 2016/12/1
N2 - Bismuth titanate (Bi4Ti3O12 or BiTO) is known for its high resistance to dielectric fatigue and relatively large remnant polarization. Owing to these characteristics, it has been applied in FeRAM memory. BiTO is also known to be a potential ionic conductor. In both applications, crystalline defects play an important role. In this work, a standard thermochemical equilibrium procedure is used to analyze defect chemistry in BiTO. The results indicate a strong oxidized state. To obtain a reduced condition, extremely low oxygen partial pressures and high temperatures have to be achieved. Even at normal conditions, results show a relatively high concentration of holes, which is in agreement with the p-type leaking experimentally observed, relatively high concentration of oxygen vacancies, which suggest the potential application of BiTO as ion conductor, and relative high concentration of bismuth vacancies, in accordance with the known problem of bismuth volatilization observed during the processing of this material.
AB - Bismuth titanate (Bi4Ti3O12 or BiTO) is known for its high resistance to dielectric fatigue and relatively large remnant polarization. Owing to these characteristics, it has been applied in FeRAM memory. BiTO is also known to be a potential ionic conductor. In both applications, crystalline defects play an important role. In this work, a standard thermochemical equilibrium procedure is used to analyze defect chemistry in BiTO. The results indicate a strong oxidized state. To obtain a reduced condition, extremely low oxygen partial pressures and high temperatures have to be achieved. Even at normal conditions, results show a relatively high concentration of holes, which is in agreement with the p-type leaking experimentally observed, relatively high concentration of oxygen vacancies, which suggest the potential application of BiTO as ion conductor, and relative high concentration of bismuth vacancies, in accordance with the known problem of bismuth volatilization observed during the processing of this material.
KW - Defect chemistry
KW - bismuth titanate
KW - ferroelectric
KW - ionic conductor
UR - http://www.scopus.com/inward/record.url?scp=84995486499&partnerID=8YFLogxK
U2 - 10.1142/S1793604716420066
DO - 10.1142/S1793604716420066
M3 - Artículo
SN - 1793-6047
VL - 9
JO - Functional Materials Letters
JF - Functional Materials Letters
IS - 6
M1 - 1642006
ER -