Application of ZnO schottky diodes in rectifier circuits for implementation in energy harvesting

M. Gomez-Alvarez; I. Mejia; V. Cabrera; C. Avila-Avendano; R. García; A. Diaz-Cano; Y. Leon-Nataret; M. Quevedo-Lopez; L. Reséndiz

Application of ZnO schottky diodes in rectifier circuits for implementation in energy harvesting

M. Gomez-Alvarez, I. Mejia, V. Cabrera, C. Avila-Avendano, R. García, A. Diaz-Cano, Y. Leon-Nataret, M. Quevedo-Lopez, L. Reséndiz

Unidad Profesional Interdisciplinaria de Ingeniería y Tecnologías Avanzadas (UPIITA)

Research output: Contribution to journal › Article › peer-review

Abstract

This work presents the results obtained from the SPICE simulation of a full-wave bridge rectifier circuit, a double half-wave rectifier circuit and a half-wave rectifier circuit, each at a frequency of 816MHz and low amplitude. The results match the experimental I-V curves obtained with the parameters extracted from the electrical characteristics of the experimental Schottky diodes: Si/SiO₂/Cr/Au/ZnO/Al, glass/Al/ZnO/Au and glass/Al/ZnO/Pd. The results of the simulation show that the devices fabricated in this work can be a useful alternatives for rectifier circuits commonly used in energy harvesting systems, because they are capable of delivering output rectified voltages higher than 1V.

Original language	English
Pages (from-to)	153-159
Number of pages	7
Journal	Digest Journal of Nanomaterials and Biostructures
Volume	14
Issue number	1
State	Published - 1 Jan 2019

Keywords

Energy harvesting
Rectifiers
Schottky diodes

Cite this

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AU - Gomez-Alvarez, M.

AU - Mejia, I.

AU - Cabrera, V.

AU - Avila-Avendano, C.

AU - García, R.

AU - Diaz-Cano, A.

AU - Leon-Nataret, Y.

AU - Quevedo-Lopez, M.

AU - Reséndiz, L.

PY - 2019/1/1

Y1 - 2019/1/1

N2 - This work presents the results obtained from the SPICE simulation of a full-wave bridge rectifier circuit, a double half-wave rectifier circuit and a half-wave rectifier circuit, each at a frequency of 816MHz and low amplitude. The results match the experimental I-V curves obtained with the parameters extracted from the electrical characteristics of the experimental Schottky diodes: Si/SiO2/Cr/Au/ZnO/Al, glass/Al/ZnO/Au and glass/Al/ZnO/Pd. The results of the simulation show that the devices fabricated in this work can be a useful alternatives for rectifier circuits commonly used in energy harvesting systems, because they are capable of delivering output rectified voltages higher than 1V.

AB - This work presents the results obtained from the SPICE simulation of a full-wave bridge rectifier circuit, a double half-wave rectifier circuit and a half-wave rectifier circuit, each at a frequency of 816MHz and low amplitude. The results match the experimental I-V curves obtained with the parameters extracted from the electrical characteristics of the experimental Schottky diodes: Si/SiO2/Cr/Au/ZnO/Al, glass/Al/ZnO/Au and glass/Al/ZnO/Pd. The results of the simulation show that the devices fabricated in this work can be a useful alternatives for rectifier circuits commonly used in energy harvesting systems, because they are capable of delivering output rectified voltages higher than 1V.

KW - Energy harvesting

KW - Rectifiers

KW - Schottky diodes

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JF - Digest Journal of Nanomaterials and Biostructures

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Application of ZnO schottky diodes in rectifier circuits for implementation in energy harvesting

Abstract

Keywords

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